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Drift-Diffusion Lab

Simulate single semiconductor characteristics

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Version 1.8.3 - published on 16 Aug 2010

doi:10.4231/D36Q1SG88 cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

Bias_option Bias_Potential Light_edge Excess_carrier Light_top_option Energy_band_light_top

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Tools

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Abstract

This tool enables users to understand the basic concepts of the drift and diffusion of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias, or both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.

Typical simulation runtime : Less than a minute

Improvements / modifications in subsequent version releases:

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PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

Sponsored by

NCN@Purdue

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Saumitra Raj Mehrotra; Nicholas I Kisseberth; Abhijeet Paul (2010), "Drift-Diffusion Lab," http://nanohub.org/resources/semi. (DOI: 10.4231/D36Q1SG88).

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