The effects of changing Gate Voltages (Silicon Substrate)

This page is designed to allow you to understand how changing the gate voltage will change the saturation current of a MOSFET.

Instructions:

You can use the tabs at the top of the window to navigate quickly between pages. Click on the blue dot to open a pop-up window to select a particular value for the Gate Voltage. Then click on the "Simulate" button at the bottom right hand of the window.

To plot results for another Gate Voltage, click on the "Input" button to go back and adjust the input parameters. In the simulation tab, to see all curves simultaneously, click on the "All" button at the bottom left hand of the window.

To find out which curve corresponds to each value, you can click on the white scroll bar at the bottom of the window to find the corresponding legend. This will allow you to compare the different Drain Currents most effectively.

Gate: The gate is a structure used to control output current in a field effect transistor. In MOSFETs, the gate is comprised of gate contacts and thin oxides.

Gate Voltage: It is the value of the voltage required when the conducting channel just begins to connect the source and drain contacts of the transistor, allowing significant current flow. For simulation, range of gate length can only be between 1V and 6V.