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This simulation is designed to allow users to determine the most efficient MOSFET by adjusting various parameters and acheiving the best combination. The effectiveness of the MOSFET can be determined from the saturation current that is achieved by the graph.
Learn more about MOSFETs:
Understanding the limitations of the conventional Si MOSFETs at 300K and finding alternatives that overcome these limitations. The higher the drain current, the quicker the load of the circuit is charged or discharged. High speed electronics rely on transistors with a high drain current to work most efficiently.
Gate: The gate is a structure used to control output current in a field effect transistor. In MOSFETs, the gate is comprised of gate contacts and thin oxides.
Drain: The drain is a heavily doped region in semiconductor substrates.
Gate Voltage: It is the value of the voltage required when the conducting channel just begins to connect the source and drain contacts of the transistor, allowing significant current flow. For simulation, range of gate length can only be between 1V and 6V.
Oxide Thickness: This is the property that is changed to vary Gate Voltages. A thinner oxide allows a higher gate voltage and vice versa. For simulation, range of gate length can only be between 1nm and 15nm.
Gate Length: It is the effective length of the distance in the near-surface regious of a substrate between the edges of the drain and source regions in the field effect trasistor. For simulation, range of gate length can only be between 10nm and 40nm.
Substrate: Substrates control the ease of flow of electrons between the source and the drain. The ability to control this flow of electrons is dependant on the gate voltage.
Gate Dielectric: This is a very thin layer of an insulator between the semiconductor and the gate contact.
Audience:
This tool has been designed to help Undergraduate Freshmen and Sophomores better understand the workings of MOSFETs.