Help Us Out!
We at nanoHUB.org are committed to improving the user experience and are experimenting with new, different ways to represent data and browse content. We want to make finding the content you're interested in easier and quicker. Please leave feedback when you have a few moments!
Note: Only nanoelectronic tools are currently represented.
Simulate Nanowire/UTB FETs Using KP method
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
Calculation of the allowed and forbidden states in a periodic potential
Run the community code ABINIT for electronic structure calculations under density functional theory through a convenient graphical user interface
Framework for solving systems of partial differential equations (PDEs) in time and 1, 2, or 3 space dimensions
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Computes current-voltage (I-V) characteristics and conductance spectrum (G-V) of a molecule sandwiched between two metallic contacts
Easy-to-use interface for designing and analyzing electronic properties of different nano materials
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis
This tool enables users to explore and teach the basic concepts of P-N junction devices.
Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport
Compute the eigenstates of a particle in a box of various shapes including domes and pyramids.
Capacitance of a MOS device
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
2D/3D devices under steady state, transient conditions or AC small-signal analysis
Simulates ballistic transport in 2D MOSFET devices
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
Quantum-corrected Monte-Carlo transport simulator for two-dimensional MOSFET devices.
Calculates the phonon band structure of carbon nanotubes using the force constant method.
Computes the electronic structure of various materials in the spatial configuration of bulk (infinitely periodic), quantum wells (confined in one dimension, infinitely periodic in 2 dimensions), and wires (confined in 2 dimensions and infinitely …
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution
Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model
Compute the strain effects on the thermal properties of bulk crystalline silicon
Analyzes device reliability based on NBTI
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
Simulates the oxidation process in integrated circuit fabrication
Simulates the oxidation flux in the oxide growth process in integrated circuit fabrication
Simulates the dopant diffusion process in integrated circuit fabrication
Simulates the point-defect-coupled diffusion process in integrated circuit fabrication
Improved program consists of DEMON and SDEMON
A simulation tool for Thin films transistors based on network of nanotubes or nanowires
Predictive model files for future transistor technologies.
Analyze performances of carbon nanotube bundle interconnects
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers
Particle in a box - The particle in a box (or the infinite potential well) is a simple idealized system that is completely solved within quantum mechanics. The infinite potential well is a finite sized region in space (the box) with an infinite …
Calculates low field electron mobility in III-V semiconductors using Rode's Method
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures
Transmission and the reflection coefficient of a five, seven, nine, eleven and 2n-segment piece-wise constant potential energy profile
TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.
Simulates 1D heterostructures, including solar cells
3D Simulator for Silicon Nanowire Field Effect Transistors with Multiple Gates
Explore the influence of strain on first-principles bandstructures of semiconductors.
Estimate circuit level performance and power of novel devices
Simplex Monte Carlo - solves for hot electron and hole distribution functions (DF) given input PADRE solution and mesh files.
Basic Ensemble Monte Carlo code for the study of transport in bulk GaAs semiconductor.
Simulate Coulomb Blockade through Many-Body Calculations in a single and double quantum dot system
Visualize different crystal lattices and planes
Calculate the electron & hole density in semiconductors
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
Solve the time independent schrodinger eqn. for arbitrary periodic potentials
Simulate single semiconductor characteristics
Non-equilibrium Green's Function Density Functional Theory Simulator
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure
Simulate Electron transport in Single-walled carbon nanotubes using an upwinding discretization of the Boltzmann transport equation in the relaxation time approximation.
Estimate performances of graphene interconnects
This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials
This tool performs a self-consistent simulation of the current-voltage curve of a metallic single-wall carbon nanotube with Joule heating.
Simulate clusters configurations of nanomagnets
Calculates bound states for square, parabolic, triangular and V-shaped potential energy profile
Path integral calculation of exchange coupling of spins in neighboring quantum dots.
One-stop-shop for teaching semiconductor device education
Simulate 2-D electrons transport in CNTFET
3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors.
Tools to complement Illinois Solid State Electronic Devices Classes
Depletion Approximation for a PN Junction
This tool gives insight into the basic operation of MESFET devices
Poisson-Schrödinger Solver for 1D Heterostructures
One-stop-shop for teaching quantum mechanics for engineers
Simulate spin precession effect in pure silicon
This tool is used for the Advanced Computational Electronics Tool Based Curricula
Simulate 1D RTDs using NEGF.
Full-band 3D quantum transport simulation in nanowire structure
effects of doping in bulk silicon.
An Assembly of TCAD tools for circuit, device, and process simulation
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using Non-Equilibrium Green's Functions
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions
Educational Tools for Classroom and Homework use to introduce nanotechnology concepts
Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Simulate resistance change of a Voltage-controlled Memristor
Calculations of doped bulk silicon transport data