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NanoTCAD ViDES
3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors.
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Abstract
You can DOWNLOAD the source code under the BSD 4-clause license and find more information at NanoTCAD ViDES website
Credits
Xufeng Wang (rappture interface)
References
Y. Yoon, G. Fiori, S. Hong, J. Guo and G. Iannaccone, "Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs", IEEE Transaction on Electron Devices, Vol. 55, pp. 2314-2323, 2008.
G. Fiori, G. Iannaccone, "Simulation of Graphene Nanoribbon Field-Effect Transistors", IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007.
G. Fiori, G. Iannaccone, G. Klimeck, "A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry", IEEE Transaction on Electron Devices, Vol. 53, Issue 8, pp. 1782-1788, 2006.
G. Fiori, G. Iannaccone, G. Klimeck, "Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors", IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007.
G. Fiori, G. Iannaccone, "Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007.
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