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This tool is a 1-D simulator designed especially for short-channel FETs. It utilizes a physics-based compact FET model, referred to as the MIT virtual-source (VS) model. The VS model contains sixteen parameters, eleven of which can be directly obtained from measurements. Therefore, the VS model contains only five fit parameters. After entering required parameters, users can plot ID vs. VGS and ID vs. VDS both in linear and logarithm coordinates.
The VS simulator was written by Yubo Sun and Xingshu Sun. User interface was created by Xufeng Wang and Xingshu Sun.
A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, “A simple semi-empirical short-channel MOSFET current–Voltage model continuous across all regions of operation and employing only physical parameters,” IEEE Trans. on Electron Devices, vol. 56, no. 8, pp. 1674-1680, Aug. 2009.
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- NEEDS node
- virtual source model