Tags: ABACUS

Description

ABACUS

ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods for understanding of semiconductors.

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Resources (61-80 of 83)

  1. SCHRED: Exercise 2

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.

  2. Schred: Exercise 3

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates. www.eas.asu.edu/~vasilesk NSF

  3. MOSFET Exercise

    07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

  4. Quantum-Mechanical Reflections in Nanodevices: an Exercise

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise points out to the fact that quantum-mechanical reflections are going to be significant in nanoscale devices and proper modeling of these device structures must take into consideration the quantum-mechanical reflections. NSF, ONR Dragica Vasileska personal web-site...

  5. Periodic Potentials and Bandstructure: an Exercise

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise teaches the students that in the case of strong coupling between the neighboring wells in square and Coulomb periodic potential wells electrons start to behave as free electrons and the gaps that open at the Brillouin zone boundaries become smaller and smaller (thus recovering the...

  6. From 1 well to 2 wells to 5 wells to periodic potentials: an Exercise

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates that the interaction between the wells lifts the degeneracy of the quasi-bound states and if in the limit we have infinite periodic potential it leads to formation of energy bands. Notice that when the interaction is less strong the energy levels are more sharp and...

  7. Exercise: CV curves for MOS capacitors

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF

  8. Open Systems

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska

    This tutorial contains introductory material for Quantum Mechanics for Engineers with emphasis on tunneling, open systems and the definitions of transmission and reflection coefficients and their calculation in the case of piece-wise constant potential energy profiles.NSF

  9. Double Barrier Case

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska

    This material contains derivation for the transmission coefficient and current calculation in double-barrier structures that are also known as resonant tunneling diodes.

  10. Quantum-Mechanical Reflections: an Exercise

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  11. Double-Barrier Case: An Exercise

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  12. Schred Tutorial Version 2.1

    23 Jun 2008 | | Contributor(s):: Dragica Vasileska

    This Schred tutorial [or User's Manual] is intended to help users of the Schred tool with the Rappture interface. Readers will find various examples for modeling single-gate and dual-gate capacitors with either metal or polysilicon gates. The models also use either semi-classical or...

  13. Quantum Size Effects and the Need for Schred

    23 Jun 2008 | | Contributor(s):: Dragica Vasileska

    In this paper, we provide a historical overview of the observation of quantum effects in both experimental and theoretical nanoscale devices. This overview puts into perspective the need for developing and using the Schred tool when modeling nanoscale devices. At the end of the document, we...

  14. Homework Exercise on Drift & Diffusion in Bulk Semiconductors - considerations of lifetime

    30 Mar 2008 | | Contributor(s):: Mark Lundstrom, Saumitra Raj Mehrotra

    The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light. Analytical derivations are requested and considerations of lifetime are considered.NCN@Purdue

  15. Homework Exercise on Drift & Diffusion in Bulk Semiconductors

    30 Mar 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light.NCN@Purdue

  16. Homework Exercise on Bipolar Junction Transistors

    30 Mar 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck

    The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is...

  17. Homework Exercise on Fermi-Dirac and Maxwell-Boltzmann Distributions

    24 Jan 2008 | | Contributor(s):: Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

    The tutorial questions based on Carrier Statistics Lab v1.0 available online at Carrier Statistics Lab. Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study...

  18. Adept

    01 May 2007 | | Contributor(s):: Jeff Gray, Michael McLennan

    Simulates 1D heterostructures, including solar cells

  19. Schred

    30 Mar 2006 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng

    SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

  20. A Primer on Semiconductor Device Simulation

    23 Jan 2006 | | Contributor(s):: Mark Lundstrom

    Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor...