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ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.
17 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Xufeng Wang, Stephen M. Goodnick
This tool is used for the Advanced Computational Electronics Tool Based Curricula
ACUTE - Bandstructure Assignment
07 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is assignment that is part of the ACUTE tool-based curricula that guides the students step by step how to implement an empirical pseudopotential method for the bandstructure calculation.
ACUTE - PN Diode Modeling
In this assignment, starting from an equilibrium Poisson equation solver for pn-diode, students are required to develop a complete 1D drift-diffusion simulator using the lecture materials provided as part of the ACUTE tool-based curricula.
ACUTE - Process Simulation Assignment
28 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students the ion implantation process.
BJT - Simulation Exercise
out of 5 stars
03 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This simulation exercise teaches the students the operation of BJT transistor, what is current gain and how one extracts current gain from the Gummel plot. It also provides output device characteristics from which students have to extract the Early voltage. Furthermore, it makes the students...
BJT Problems and PADRE Exercise
11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of problems makes the students familiar with h-parameters and they also teach them how to write the input deck for simulation of BJT device to obtain the Gummel plot, the output characteristics and to extract the h-parameters. Also here, students are taught how to treat current contacts...
Bulk Monte Carlo Code Described
01 Jul 2008 | | Contributor(s):: Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...
Bulk Monte Carlo Lab:Scattering Rates for Parabolic vs. Non-Parabolic Bands: an Exercise
20 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise helps the students learn the importance of the non-parabolic band approximation for large carrier energies.
Choice of the Distribution Function
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Solid-State Theory and Semiconductor Transport Fundamentals
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Stephen M. Goodnick
As semiconductor feature sizes shrink into the nanometer scale regime, device behavior becomes increasingly complicated as new physical phenomena at short dimensions occur, and limitations in material properties are reached. In addition to the problems related to the actual operation of...
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and...
Computational Electronics HW - Simplified Band Structure Model
Computational Electronics HW - Bandstructure Calculation
Computational Electronics HW - DOS and Fermi Golden Rule
Computational Electronics HW - Drift-Diffusion Equations
Computational Electronics HW - Finite Difference Discretization of Poisson Equation
Computational Electronics HW - Linearization of Poisson Equation
Computational Electronics HW - Mobility Models
Computational Electronics HW - Quamc 2D Lab Exercises
Computational Electronics HW - Scattering Mechanisms