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ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.
Exercise: CV curves for MOS capacitors
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02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
Exercise: Density of States Function Calculation
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF
Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction
20 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction
Homework Assignment for Bulk Monte Carlo Lab: Temperature Dependence of the Low Field Mobility for  Orientation
21 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
User needs to calculate and compare with experiments the temperature dependence of the low-field electron mobility in Si.
Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations
User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.
How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
27 Jul 2008 | | Contributor(s):: Dragica Vasileska
This brief presentation outlines how one can implement quantum-mechanical space quantization effects exactly (using Schred) and approximately in drift-diffusion (using SILVACO), as well as particle-based device simulators (using Quamc2D).
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF
PN Junction Lab: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to PN Junction Lab on nanoHUB. The introduction to PN junctions is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...
Schred: Exercise 1
This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...
SCHRED: Exercise 2
In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.www.eas.asu.edu/~vasileskNSF
Schred: Exercise 3
This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates.www.eas.asu.edu/~vasileskNSF
Time-Dependent Perturbation Theory: an Exercise
10 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
Tutorial on Semi-empirical Band Structure Methods
06 Jul 2008 | | Contributor(s):: Dragica Vasileska
This tutorial explains in details the Empirical Pseudopotential Method for the electronic structure calculation, the tight-binding method and the k.p method. For more details on the Empirical Pseudopotential Method listen to the following presentation:Empirical Pseudopotential Method Described...