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Tags: ACUTE

Description

ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.

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Resources (21-40 of 66)

  1. Computational Electronics HW - Scharfetter-Gummel Discretization

    11 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/5041

  2. Computational Electronics HW - Mobility Models

    11 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/5043

  3. Computational Electronics HW - Linearization of Poisson Equation

    11 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/5045

  4. Computational Electronics HW - Scattering Mechanisms

    11 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/5047

  5. Computational Electronics HW - Quamc 2D Lab Exercises

    11 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/5049

  6. Tutorial on Semi-empirical Band Structure Methods

    06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska

    This tutorial explains in details the Empirical Pseudopotential Method for the electronic structure calculation, the tight-binding method and the k.p method. For more details on the Empirical...

    http://nanohub.org/resources/4882

  7. Exercise: Density of States Function Calculation

    06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/4890

  8. Schred: Exercise 1

    06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the...

    http://nanohub.org/resources/4900

  9. SCHRED: Exercise 2

    06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.www.eas.asu.edu/~vasileskNSF

    http://nanohub.org/resources/4902

  10. Schred: Exercise 3

    06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description...

    http://nanohub.org/resources/4904

  11. MOSFET Exercise

    07 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias...

    http://nanohub.org/resources/4906

  12. Bulk Monte Carlo Code Described

    01 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska

    In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs...

    http://nanohub.org/resources/4843

  13. Exercise: CV curves for MOS capacitors

    02 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also...

    http://nanohub.org/resources/4855

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