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ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.
ACUTE - Process Simulation Assignment
28 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students the ion implantation process.
ACUTE - PN Diode Modeling
08 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this assignment, starting from an equilibrium Poisson equation solver for pn-diode, students are required to develop a complete 1D drift-diffusion simulator using the lecture materials provided as part of the ACUTE tool-based curricula.
ACUTE - Bandstructure Assignment
07 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is assignment that is part of the ACUTE tool-based curricula that guides the students step by step how to implement an empirical pseudopotential method for the bandstructure calculation.
PN Junction Lab: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to PN Junction Lab on nanoHUB. The introduction to PN junctions is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs,...
Cosine Bands: an Exercise for PCPBT
out of 5 stars
21 Aug 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
This exercise demonstrates the formation of cosine bands as we increase the number of wells in the n-well structure.
Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations
21 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.
Homework Assignment for Bulk Monte Carlo Lab: Temperature Dependence of the Low Field Mobility for  Orientation
User needs to calculate and compare with experiments the temperature dependence of the low-field electron mobility in Si.
Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction
20 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction
Bulk Monte Carlo Lab:Scattering Rates for Parabolic vs. Non-Parabolic Bands: an Exercise
This exercise helps the students learn the importance of the non-parabolic band approximation for large carrier energies.
BJT - Simulation Exercise
03 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This simulation exercise teaches the students the operation of BJT transistor, what is current gain and how one extracts current gain from the Gummel plot. It also provides output device characteristics from which students have to extract the Early voltage. Furthermore, it makes the students...
How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
27 Jul 2008 | | Contributor(s):: Dragica Vasileska
This brief presentation outlines how one can implement quantum-mechanical space quantization effects exactly (using Schred) and approximately in drift-diffusion (using SILVACO), as well as particle-based device simulators (using Quamc2D).
Exercise: Basic Operation of n-Channel SOI Device
23 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students the basic operation of n-channel SOI devices.NSF
BJT Problems and PADRE Exercise
11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of problems makes the students familiar with h-parameters and they also teach them how to write the input deck for simulation of BJT device to obtain the Gummel plot, the output characteristics and to extract the h-parameters. Also here, students are taught how to treat current contacts...
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Stephen M. Goodnick
As semiconductor feature sizes shrink into the nanometer scale regime, device behavior becomes increasingly complicated as new physical phenomena at short dimensions occur, and limitations in material properties are reached. In addition to the problems related to the actual operation of...
Time-Dependent Perturbation Theory: an Exercise
10 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
Computational Electronics HW - Simplified Band Structure Model
Computational Electronics HW - Bandstructure Calculation
Computational Electronics HW - DOS and Fermi Golden Rule
Computational Electronics HW - Drift-Diffusion Equations
Computational Electronics HW - Finite Difference Discretization of Poisson Equation