Tags: ACUTE

Description

ACUTE

ACUTE is a tool-based curricula designed to introduce interested scientists from Academia and Industry in advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices.

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  1. Exercise: Density of States Function Calculation

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF

  2. PN Diode Exercise: Series Resistance

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    An exercise in determining the series resistance in a PN diode.

  3. Exercise: PIN Diode

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    An exercise in the operation of a PIN diode under the conditions of forward and reverse bias.

  4. Schred: Exercise 1

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise illustrates basic SCHRED capabilities for modeling MOS capacitors and also illustrates how the bound states distribution in energy changes with doping. The average distance of the carriers calculated semi-classically and quantum-mechanically is also examined since it is important...

  5. SCHRED: Exercise 2

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the channel.

  6. Schred: Exercise 3

    06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise examines the degradation of the total gate capacitance with technology generation due to Maxwell-Boltzmann instead of Fermi-Dirac statistics, quantum-mechanical charge description and depletion of the polysilicon gates. www.eas.asu.edu/~vasilesk NSF

  7. MOSFET Exercise

    07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

  8. Bulk Monte Carlo Code Described

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...

  9. Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...

  10. Quantum-Mechanical Reflections in Nanodevices: an Exercise

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise points out to the fact that quantum-mechanical reflections are going to be significant in nanoscale devices and proper modeling of these device structures must take into consideration the quantum-mechanical reflections. NSF, ONR Dragica Vasileska personal web-site...

  11. Periodic Potentials and Bandstructure: an Exercise

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise teaches the students that in the case of strong coupling between the neighboring wells in square and Coulomb periodic potential wells electrons start to behave as free electrons and the gaps that open at the Brillouin zone boundaries become smaller and smaller (thus recovering the...

  12. From 1 well to 2 wells to 5 wells to periodic potentials: an Exercise

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates that the interaction between the wells lifts the degeneracy of the quasi-bound states and if in the limit we have infinite periodic potential it leads to formation of energy bands. Notice that when the interaction is less strong the energy levels are more sharp and...

  13. Exercise: CV curves for MOS capacitors

    02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF

  14. Quantum-Mechanical Reflections: an Exercise

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  15. Double-Barrier Case: An Exercise

    30 Jun 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

  16. Schred Tutorial Version 2.1

    23 Jun 2008 | | Contributor(s):: Dragica Vasileska

    This Schred tutorial [or User's Manual] is intended to help users of the Schred tool with the Rappture interface. Readers will find various examples for modeling single-gate and dual-gate capacitors with either metal or polysilicon gates. The models also use either semi-classical or...

  17. Quantum Size Effects and the Need for Schred

    23 Jun 2008 | | Contributor(s):: Dragica Vasileska

    In this paper, we provide a historical overview of the observation of quantum effects in both experimental and theoretical nanoscale devices. This overview puts into perspective the need for developing and using the Schred tool when modeling nanoscale devices. At the end of the document, we...

  18. Why QuaMC 2D and Particle-Based Device Simulators?

    02 May 2008 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck

    We describe the need for particle-based device simulators when modeling nanoscale devices.

  19. Examples for QuaMC 2D particle-based device Simulator Tool

    10 May 2008 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck

    We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.

  20. Ensemble Monte Carlo Method Described

    27 Apr 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry

    In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR