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Exercise: CV curves for MOS capacitors
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
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Exercise: Density of States Function Calculation
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
These exercises teach the students how to derive the DOS function for a 2D and a 1D system and to calculate the energy-dependent effective mass for non-parabolic bands.www.eas.asu.edu/~vasileskNSF
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Exercise: PIN Diode
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
An exercise in the operation of a PIN diode under the conditions of forward and reverse bias.
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From 1 well to 2 wells to 5 wells to periodic potentials: an Exercise
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates that the interaction between the wells lifts the degeneracy of the quasi-bound states and if in the limit we have infinite periodic potential it leads to formation of energy bands. Notice that when the interaction is less strong the energy levels are more sharp and...
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Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction
20 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction
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Homework Assignment for Bulk Monte Carlo Lab: Temperature Dependence of the Low Field Mobility for [100] Orientation
21 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
User needs to calculate and compare with experiments the temperature dependence of the low-field electron mobility in Si.
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Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations
21 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.
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How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
27 Jul 2008 | | Contributor(s):: Dragica Vasileska
This brief presentation outlines how one can implement quantum-mechanical space quantization effects exactly (using Schred) and approximately in drift-diffusion (using SILVACO), as well as particle-based device simulators (using Quamc2D).
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Introduction to Computational Electronics
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
What Is Computational Electronics and Why Do We Need It?
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Introduction to DD Modeling with PADRE
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Silvaco/PADRE Description and Application to Device Simulation
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Introduction to nanoMOS
02 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...
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Introduction to Silvaco Simulation Software
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Silvaco/PADRE Description and Application to Device Simulation
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Is dual gate device structure better from a thermal perspective?
01 Sep 2008 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons....
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Modeling Single and Dual-Gate Capacitors using SCHRED
31 Mar 2006 | | Contributor(s):: Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description,...
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MOS Capacitors: Description and Semiclassical Simulation With PADRE
26 Jun 2006 | | Contributor(s):: Dragica Vasileska
Introduction of Quantum-Mechanical Effects in Device Simulation
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MOS Capacitors: Theory and Modeling
18 Jul 2008 | | Contributor(s):: Dragica Vasileska
These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.
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MOSFet
30 Mar 2006 | | Contributor(s):: Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
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MOSFET Exercise
07 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF
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NanoMOS
19 May 2006 | | Contributor(s):: , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
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NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | | Contributor(s):: Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...