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What are the proper transport models at the nanoscale?
30 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This presentation is part of the series Nanoelectronics and Modeling at the Nanoscale
Atomistic Simulations of Reliability
06 Jul 2010 | | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...