Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Atomistic Simulations of Reliability
06 Jul 2010 | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...
20 Jul 2017 | | Contributor(s):: Joseph Anderson
Simulate molecular dynamics using LAMMPS as well as an addition electrochemical force field (EChemDID)
Ryan Mark Hutchins
What are the proper transport models at the nanoscale?
29 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This presentation is part of the series Nanoelectronics and Modeling at the Nanoscale