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Atomistic Simulations of Reliability
06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have...
Ryan Mark Hutchins
I’m currently a graduate student in Materials Science and Engineering at the University of Arizona pursuing my PhD
What are the proper transport models at the nanoscale?
30 Jun 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This presentation is part of the series Nanoelectronics and Modeling at the Nanoscale