
ECE 656 Lecture 40: Ballistic Transport in Devices II
21 Feb 2012   Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET

ECE 656 Lecture 39: Ballistic Transport in Devices I
09 Feb 2012   Contributor(s):: Mark Lundstrom
Outline:Transport across a barrierTransport across a thin baseHighfield collectorsQuestions?

ECE 656 Lecture 7: Resistance  Ballistic to Diffusive
16 Sep 2011   Contributor(s):: Mark Lundstrom
Outline:Review2D ballistic resistors2D diffusive resistorsDiscussionSummary

Lecture 3: ResistanceBallistic to Diffusive
28 Jul 2011   Contributor(s):: Mark Lundstrom
The resistance of a ballistic conductor and concepts, such as the quantumcontact resistance, are introduced and discussed. The results are then generalized to treat transport all the way from the ballistic to diffusive regimes.

FETToy
14 Feb 2006   Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic IV characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

ECE 656 Lecture 35: Ballistic Transport
09 Dec 2009   Contributor(s):: Mark Lundstrom
Outline:Schottky barriersTransport across a thin baseHighfield collectors

ECE 656 Lecture 7: 2 and 3D Resistors
14 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Another view of the same problem2D resistorsDiscussion3D resistorsSummary

ECE 656 Lecture 13: Solving the BTE: equilibrium and ballistic
22 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

ECE 656 Lecture 6: Discussion
14 Sep 2009   Contributor(s):: Mark Lundstrom
OutlineQuantum confinement and effective massBulk 1D transport and mfpPeriodic vs. Box boundary conditionsThermal velocities"Ballistic mobility"

ECE 656 Lecture 5: 1D Resistors
14 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Review1D ballistic resistors1D diffusive resistorsDiscussionSummary

Thermoelectric Power Factor Calculator for Superlattices
18 Oct 2008   Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using NonEquilibrium Green's Functions

Thermoelectric Power Factor Calculator for Nanocrystalline Composites
18 Oct 2008   Contributor(s):: Terence Musho, Greg Walker
Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using NonEquilibrium Green's Functions

A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007   Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...

Introduction to FETToy
03 Jul 2007   Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

Introduction to nanoMOS
02 Jul 2007   Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

SchottkyBarrier CNFET
16 Mar 2007   Contributor(s):: Arash Hazeghi, Tejas K, H.S. Philip Wong
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006   Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metaloxidesemiconductor fieldeffect transistors (CNTMOSFETs) is simulated using the Nonequilibrium Green’s function formalism. A cylindrical transistor geometry with wrappedaround gate and doped source/drain regions are assumed. It should be noted...

FETToy 2.0 Source Code Download
09 Mar 2005 
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic IV characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a...

Resonant Tunneling Diode Simulator
10 Oct 2005   Contributor(s):: Michael McLennan
Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport