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Tags: ballistic MOSFET

Resources (1-20 of 33)

  1. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for...

    http://nanohub.org/resources/9344

  2. ECE 612 Lecture 26: Heterostructure FETs

    10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Heterojunction review, 3) Modulation doping, 4) I-V characteristics, 5) Device Structure / Materials, 6) Summary.

    http://nanohub.org/resources/6032

  3. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5368

  4. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review and introduction, 2) Scattering theory of the MOSFET, 3) Transmission under low VDS, 4) Transmission under high VDS, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5367

  5. Lecture 3A: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...

    http://nanohub.org/resources/5309

  6. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

    http://nanohub.org/resources/5310

  7. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...

    http://nanohub.org/resources/5207

  8. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...

    http://nanohub.org/resources/5311

  9. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...

    http://nanohub.org/resources/5312

  10. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...

    http://nanohub.org/resources/5307

  11. Nano Carbon: From ballistic transistors to atomic drumheads

    14 May 2008 | Online Presentations | Contributor(s): Paul L. McEuen

    Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an...

    http://nanohub.org/resources/4398

  12. Can numerical “experiments” INSPIRE physical experiments?

    20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of...

    http://nanohub.org/resources/3716

  13. MCW07 Modeling Molecule-Assisted Transport in Nanotransistors

    06 Nov 2007 | Online Presentations | Contributor(s): Kamil Walczak

    Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel....

    http://nanohub.org/resources/3074

  14. The Nano-MOSFET: A brief introduction

    17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET channel lengths are now well below 100nm, and getting smaller, but MOSFETs are still modeled and understood much as they were 30 years ago. Seminal work in the 1960’s laid the...

    http://nanohub.org/resources/2980

  15. ECE 612 Lecture 10: The Ballistic MOSFET

    18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1794

  16. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1797

  17. Logic Devices and Circuits on Carbon Nanotubes

    05 Apr 2006 | Online Presentations | Contributor(s): Joerg Appenzeller

    Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...

    http://nanohub.org/resources/1487

  18. Optimization of Transistor Design for Carbon Nanotubes

    20 Jan 2006 | Online Presentations | Contributor(s): Jing Guo

    We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The...

    http://nanohub.org/resources/970

  19. A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

    17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin

    As the device size of the conventional planar metal oxide semiconductor field effect transistor (MOSFET) shrinks into the deep sub micron regime, the device performance significantly...

    http://nanohub.org/resources/983

  20. Simple Theory of the Ballistic MOSFET

    11 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom

    Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I...

    http://nanohub.org/resources/491

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