Tags: ballistic MOSFET

Papers (1-5 of 5)

  1. Towards Multi-Scale Modeling of Carbon Nanotube Transistors

    20 Sep 2006 | | Contributor(s):: Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

    Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...

  2. Exploring New Channel Materials for Nanoscale CMOS

    21 May 2006 | | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics, and...

  3. Device Physics and Simulation of Silicon Nanowire Transistors

    20 May 2006 | | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  4. Notes on the Ballistic MOSFET

    08 Oct 2005 | | Contributor(s):: Mark Lundstrom

    When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...

  5. Theory of Ballistic Nanotransistors

    27 Nov 2002 | | Contributor(s):: Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

    Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...