Towards Multi-Scale Modeling of Carbon Nanotube Transistors

20 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe …

http://nanohub.org/resources/1818

Exploring New Channel Materials for Nanoscale CMOS

21 May 2006 | Publications | Contributor(s): Anisur Rahman

The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the …

http://nanohub.org/resources/1315

Device Physics and Simulation of Silicon Nanowire Transistors

20 May 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

http://nanohub.org/resources/1313

Notes on the Ballistic MOSFET

08 Oct 2005 | Publications | Contributor(s): Mark Lundstrom

When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance …

http://nanohub.org/resources/489

Theory of Ballistic Nanotransistors

27 Nov 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the …

http://nanohub.org/resources/122