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Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...