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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
1-D Phonon BTE Solver
28 Jul 2014 | | Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Exploring New Channel Materials for Nanoscale CMOS
27 Jun 2013 | | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics,...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
27 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Landauer Approach to Thermoelectrics
21 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
Nanoscale Transistors Lecture 6: Ballistic Model
ECE 656 Lecture 40: Ballistic Transport in Devices II
20 Dec 2011 | | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET
ECE 656 Lecture 39: Ballistic Transport in Devices I
Outline:Transport across a barrierTransport across a thin baseHigh-field collectorsQuestions?
Dissipative Quantum Transport in Semiconductor Nanostructures
23 Dec 2011 | | Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...
ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
11 Nov 2011 | | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
ECE 656 Lecture 5: Modes and Transmission
16 Sep 2011 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 7: Resistance - Ballistic to Diffusive
Outline:Review2D ballistic resistors2D diffusive resistorsDiscussionSummary
Lecture 3: Resistance-Ballistic to Diffusive
28 Jul 2011 | | Contributor(s):: Mark Lundstrom
The resistance of a ballistic conductor and concepts, such as the quantumcontact resistance, are introduced and discussed. The results are then generalized to treat transport all the way from the ballistic to diffusive regimes.
OMEN Nanowire Homework Problems
23 Jan 2011 | | Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.
difference between ballistic transport and quasic -ballistc transport
Closed | Responses: 0
difference between ballistic transport and quasic -ballistc transport ,,, what is subband structure ? how wiil it look like. for gate all around (GAA)?
For a length within the ballistic regime, why the current value changing with the length ?
Open | Responses: 1
Ok, I considered the relaxation time to find the relaxation length
( L = tau * Vf = 36.8 um ; taking Vf = 8.10^5m/s )
And so I chose 2 values for the...