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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | Papers | Contributor(s): Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts....
1-D Phonon BTE Solver
0.0 out of 5 stars
29 Jul 2014 | Tools | Contributor(s): Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Landauer Approach to Thermoelectrics
23 Jun 2013 | Papers | Contributor(s): Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum
19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom
Nanoscale Transistors Lecture 6: Ballistic Model
ECE 656 Lecture 40: Ballistic Transport in Devices II
21 Feb 2012 | Online Presentations | Contributor(s): Mark Lundstrom
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET
ECE 656 Lecture 39: Ballistic Transport in Devices I
09 Feb 2012 | Online Presentations | Contributor(s): Mark Lundstrom
Transport across a barrier
Transport across a thin base
Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011 | Papers | Contributor(s): Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...
ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
05 Dec 2011 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 656 Lecture 5: Modes and Transmission
16 Sep 2011 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 656 Lecture 7: Resistance - Ballistic to Diffusive
2D ballistic resistors
2D diffusive resistors
Lecture 3: Resistance-Ballistic to Diffusive
28 Jul 2011 | Online Presentations | Contributor(s): Mark Lundstrom
The resistance of a ballistic conductor and concepts, such as the quantum
contact resistance, are introduced and discussed. The results are then
generalized to treat transport all the way from...
OMEN Nanowire Homework Problems
24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...
difference between ballistic transport and quasic -ballistc transport
Closed | Responses: 0
difference between ballistic transport and quasic -ballistc transport ,,, what is subband structure ? how wiil it look like. for gate all around (GAA)?
For a length within the ballistic regime, why the current value changing with the length ?
Open | Responses: 1
Ok, I considered the relaxation time to find the relaxation length
( L = tau * Vf = 36.8 um ; taking Vf = 8.10^5m/s )
And so I chose 2 values for the...