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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Low Temperature Enhancement of the Thermoelectric Seebeck Coefficient in Semiconductor Nanoribbons
09 Nov 2016 | | Contributor(s):: Kommini Adithya, Zlatan Aksamija
IWCE 2015 Presentation. We propose a novel approach to achieving a narrow window-shaped TDF through a combination of a step-like 2-dimensional density-of-states (DOS) and inelastic optical phonon scattering. A shift in the onset of scattering with respect to the step-like DOS creates a TDF which...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...