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Robert Warren McKinney
ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015 | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
05 Dec 2011 | | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
ECE 656 Lecture 14: The Boltzmann Transport Equation
14 Oct 2011 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionEquation of motionThe BTESolving the s.s. BTEDiscussionSummary
Lecture 7: The Boltzmann Transport Equation
17 Aug 2011 | | Contributor(s):: Mark Lundstrom
Semi-classical carrier transport is traditionally described by the Boltzmann Transport Equation (BTE). In this lecture, we present theBTE, show how it is solved, and relate it to the Landauer Approach usedin these lectures
Introduction to Boltzmann Transport Equation
30 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
Manual for the Generalized Bulk Monte Carlo Tool
24 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska
This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.
Generalized Monte Carlo Presentation
20 Jun 2011 | | Contributor(s):: Dragica Vasileska
This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steady-state velocity-field characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a non-parabolic bandstructure.
Boltzmann Transport Equation and Scattering Theory
01 Feb 2011 | | Contributor(s):: Dragica Vasileska
In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.