nanoHUB is available, but still under maintenance for tools; they should be available again starting around 3PM or 4 PM EST.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Thermal Transport Across Interfaces
23 Aug 2011 | Courses | Contributor(s): Timothy S Fisher
These lectures provide a theoretical development of the transport of
thermal energy by conduction in nanomaterials, in which material
interfaces typically dominate transport. The physical nature...
Solar Cell Fundamentals
19 Aug 2011 | Courses | Contributor(s): Mark Lundstrom, J. L. Gray, Muhammad A. Alam
The modern solar cell was invented at Bell Labs in 1954 and is currently receiving renewed attention as a potential contribution to addressing the world's energy challenge. This set of five...
Near-Equilibrium Transport: Fundamentals and Applications
28 Jul 2011 | Courses | Contributor(s): Mark Lundstrom
Engineers and scientists working on electronic materials and devices
need a working knowledge of "near-equilibrium" (also called "linear"
or "low-field") transport. The term "working knowledge"...
Colloquium on Graphene Physics and Devices
22 Sep 2009 | Courses | Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | Courses | Contributor(s): Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all...
5.0 out of 5 stars
03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon-...
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...
Nanoelectronics and the Meaning of Resistance
20 Aug 2008 | Courses | Contributor(s): Supriyo Datta
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is...