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Thermal Transport Across Interfaces
23 Aug 2011 | | Contributor(s):: Timothy S Fisher
These lectures provide a theoretical development of the transport ofthermal energy by conduction in nanomaterials, in which materialinterfaces typically dominate transport. The physical nature of energytransport by two carriers: electrons and phonons--will be explored.
Solar Cell Fundamentals
19 Aug 2011 | | Contributor(s):: Mark Lundstrom, J. L. Gray, Muhammad A. Alam
The modern solar cell was invented at Bell Labs in 1954 and is currently receiving renewed attention as a potential contribution to addressing the world's energy challenge. This set of five tutorials is an introduction to solar cell technology fundamentals. It begins with a broad overview of...
Near-Equilibrium Transport: Fundamentals and Applications
28 Jul 2011 | | Contributor(s):: Mark Lundstrom
Engineers and scientists working on electronic materials and devicesneed a working knowledge of "near-equilibrium" (also called "linear"or "low-field") transport. The term "working knowledge" meansunderstanding how to use theory in practice. Measurements ofresistivity, conductivity, mobility,...
Colloquium on Graphene Physics and Devices
22 Sep 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...
out of 5 stars
03 Nov 2008 | | Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
Physics of Nanoscale MOSFETs
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
Nanoelectronics and the Meaning of Resistance
20 Aug 2008 | | Contributor(s):: Supriyo Datta
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...