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Colloquium on Graphene Physics and Devices
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22 Sep 2009 | Courses | Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Lecture 1: Electronics from the Bottom Up
22 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta
Network for Computational Nanotechnology, Intel Foundation
Lecture 2: Graphene Fundamentals
Lecture 6: Graphene PN Junctions
22 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: Introduction Electron optics in graphene Transmission across NP junctions Conductance of PN and NN junctions Discussion Summary Network for Computational Nanotechnology, Intel …
Lecture 3: Low Bias Transport in Graphene: An Introduction
18 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: Introduction and Objectives Theory Experimental approach Results Discussion Summary Lecture notes are available for this lecture. Network for Computational Nanotechnology, …
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | Courses | Contributor(s): Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within …
Lecture 1: Percolation and Reliability of Electronic Devices
17 Sep 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 2: Threshold, Islands, and Fractals
Lecture 3: Electrical Conduction in Percolative Systems
Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via …
Lecture 1: Percolation in Electronic Devices
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity …
03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or …
29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally …
Physics of Nanoscale MOSFETs
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of …
Introduction: Nanoelectronics and the meaning of resistance
20 Aug 2008 | Online Presentations | Contributor(s): Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all …
Nanoelectronics and the Meaning of Resistance
20 Aug 2008 | Courses | Contributor(s): Supriyo Datta
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is …
Electronics From the Bottom Up: a view of conductance
17 Aug 2007 | Online Presentations | Contributor(s): Supriyo Datta
Resistance is one of the first concepts an electrical engineer learns, but things get interesting at the nanoscale. Experimentalists have found that no matter how short the resistor is, its …
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