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UCSB Graphene Nanoribbon Interconnect Compact Model
20 Apr 2017 | Compact Models | Contributor(s):
By Junkai Jiang1, Kaustav Banerjee1, Wei Cao2
1. University of California, Santa Barbara 2. University of California Santa Barbara
This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
out of 5 stars
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
Series and Parallel
17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
17 Sep 2008 | | Contributor(s):: Supriyo Datta
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
Why is capacitance a geometrical property?
Open | Responses: 2
We have seen since our school that capacitance is a geometrical property. It depends on the structure of the two electrodes. But why is it so. Can anyone shed some light on it?