
UCSB Graphene Nanoribbon Interconnect Compact Model
20 Apr 2017  Compact Models  Contributor(s):
By Junkai Jiang^{1}, Kaustav Banerjee^{1}, Wei Cao^{2}
1. University of California, Santa Barbara 2. University of California Santa Barbara
As the (local) interconnect dimension scales down to sub20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current...
http://nanohub.org/publications/126/?v=1

Notes on the Solution of the PoissonBoltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012  Teaching Materials  Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is
Semiconductor Device...
http://nanohub.org/resources/5338

Impedance Adder
24 Apr 2012  Tools  Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.
http://nanohub.org/resources/impadder

Series and Parallel
23 Apr 2012  Tools  Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.
http://nanohub.org/resources/sandp

Circuit Elements
18 Apr 2012  Tools  Contributor(s): Emmanuel Jose Ochoa, Stella Quinones
Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.
http://nanohub.org/resources/circuitelements

ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
17 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5423

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

Why is capacitance a geometrical property?
Open  Responses: 2
We have seen since our school that capacitance is a geometrical property. It depends on the structure of the two electrodes. But why is it so. Can anyone shed some light on it?
http://nanohub.org/answers/question/96