## Tags: Capacitance

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1. UCSB Graphene Nanoribbon Interconnect Compact Model

20 Apr 2017 | Compact Models | Contributor(s):

1. University of California, Santa Barbara 2. University of California Santa Barbara

As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current...

http://nanohub.org/publications/126/?v=1

2. 24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

3. 28 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

4. 17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.

5. 17 Feb 2012 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

6. 17 Sep 2008 | | Contributor(s):: Supriyo Datta

7. 09 Sep 2008 | | Contributor(s):: Mark Lundstrom

Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

8. Why is capacitance a geometrical property?

Open | Responses: 2

We have seen since our school that capacitance is a geometrical property. It depends on the structure of the two electrodes. But why is it so. Can anyone shed some light on it?