In 1973, SPICE was introduced to the world by Professor
Donald O. Pederson of the University of California at Berkeley,
and a new era of computer-aided design (CAD) tools was born.
As its name implies, SPICE is a "Simulation Program with
Integrated Circuit Emphasis." You give it a description of an
electrical circuit, made up of resistors, capacitors, inductors,
and power sources, and SPICE will predict the performance of that
circuit. Instead of bread-boarding new designs in the lab,
circuit designers found they could optimize their designs on
computers–in effect, using computers to build better computers.
Since its introduction, SPICE has been commercialized
and released in a dozen variants, such as H-SPICE, P-SPICE,
Learn more about circuit simulation from the resources on this site,
listed below. You might even acquire a taste for SPICE by
running examples online.
A Primer on Semiconductor Device Simulation
out of 5 stars
23 Jan 2006 | | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...
a TCAD Lab
29 Oct 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
An Assembly of TCAD tools for circuit, device, and process simulation
a TCAD Lab
Introduction to TCAD Simulation
The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software.
Amine Linked Single Molecule Circuits: Systematic Measurements & Understanding
02 Jul 2007 | | Contributor(s):: Mark S Hybertsen
Formation and function of well-defined linkages between organic molecules and metallic electrodes has been a key issue in the field of molecular electronics. We recently discovered that the conductance of single molecule junctions formed using gold-amine linkages can be measured reliably and...
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | | Contributor(s):: Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of...
Atomic Force Microscopy
01 Dec 2005 | | Contributor(s):: Arvind Raman
Atomic Force Microscopy (AFM) is an indispensible tool in nano science for the fabrication, metrology, manipulation, and property characterization of nanostructures. This tutorial reviews some of the physics of the interaction forces between the nanoscale tip and sample, the dynamics of the...
07 Jul 2004 | | Contributor(s):: Mark Lundstrom
In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary...
CMOS-Nano Hybrid Technology: a nanoFPGA-related study
04 Apr 2007 | | Contributor(s):: Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....
ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
ECE 612 Lecture 2: Introduction to Device Simulation
08 Aug 2006 | | Contributor(s):: Mark Lundstrom
Energy and Nanoscience A More Perfect Union
27 Mar 2009 | | Contributor(s):: Mark Ratner
Huge problems of energy and sustainability confront the science/engineering community, mankind, and our planet. The energy problem comes in many dimensions, including supply, demand, conservation, transportation, and storage. This overview will stress the nature of these problems, and offer a few...
Exploring CMOS-Nano Hybrid Technology in Three Dimensions
31 Mar 2008 | | Contributor(s):: Wei Wang
CMOS-nano hybrid technology incorporate the advantages of both traditional CMOS and novel nanowire/nanotube structures, which will enhance future IC performances and create long-term breakthroughs. The CMOS-nano hybrid IC can be efficiently fabricated using the 3D integration approach. This talk...
Exponential Challenges, Exponential Rewards - The Future of Moore's Law
14 Dec 2004 | | Contributor(s):: Shekhar Borkar
Three exponentials have been the foundation of today's electronics, which are often taken for granted—namely transistor density, performance, and energy. Moore's Law captures the impact of these exponentials. Exponentially increasing transistor integration capacity, and exponentially...
Fabrication of a MOSFET within a Microprocessor
16 Nov 2005 | | Contributor(s):: John C. Bean
This resource depicts the step-by-step process by which the transistors of an integrated circuit are made.
History of Semiconductor Engineering
28 Jun 2006 | | Contributor(s):: Bo Lojek
When basic researchers started working on semiconductors during the late nineteen thirties and on integrated circuits at the end of the nineteen fifties, they did not know that their work would change the lives of future generations. Very few people at that time recognized the significance of...
Homework for Circuit Simulation: ECE 255
08 Jan 2006 | | Contributor(s):: Gerold Neudeck
This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, orsometimes check their work, by using the Spice 3F4 simulator on the nanoHUB.
Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
08 Aug 2006 | | Contributor(s):: Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...
Khan Academy Circuits
01 Mar 2016 |
Posted by Tanya Faltens