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SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018 | Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
08 Feb 2016 | | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.
Models for SETs in PSpice
Closed | Responses: 0
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
7nm Si FinFET Models with Symmetric and Asymmetric Underlap for Circuit Simulations
23 Aug 2013 | | Contributor(s):: Arun Goud Akkala, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy
This tarball contains Verilog-A compact lookup table models for 7nm channel length Si FinFET with different underlaps which can be used in HSPICE netlists for circuit simulations. Device simulation data for constructing the lookup table model was generated using NEMO5 atomistic...
SPICE Model of Graphene Nanoribbon FETs (GNRFET)
12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...