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A Phase-Changing Oxide for PS Silicon Photonics
03 Nov 2016 | | Contributor(s):: Richard Haglund
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Advanced CMOS Device Physics for 7 nm and Beyond
16 Dec 2015 | | Contributor(s):: Scott Thompson
This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device, material, and economical challenges remain. This tutorial will target understanding key device concepts for...
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Carbon-Based Nanoswitch Logic
28 Mar 2013 | | Contributor(s):: Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...
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CMOS+X: Integrated Ferroelectric Devices for Energy Efficient Electronics
09 Dec 2022 | | Contributor(s):: Sayeef Salahuddin
In this talk, I shall briefly present how integrated ferroelectric devices offer a new pathway in this context. First, I shall discuss the phenomenon of negative capacitance in ferroelectric materials. A fundamentally new state in the ferroelectrics, negative capacitance promises to reduce...
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Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
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Computational Electronics
02 Jun 2006 | | Contributor(s):: Dragica Vasileska
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet...
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Course on Beyond CMOS Computing
06 Jun 2013 | | Contributor(s):: Dmitri Nikonov
Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these...
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Design and Compact Modeling of CMOS-MEMS Resonant Body Transistors
06 Jun 2014 | | Contributor(s):: Dana Weinstein, Luca Daniel, Bichoy W. Bahr
This talk presents the latest results of the CMOS Resonant Body Transistor (RBT) fabricated in standard 32nm SOI CMOS. Using phononic crystals formed from the CMOS stack, we will discuss methods for 10x improvement of Q and suppression of spurious modes.
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Device Options and Trade-offs for 5 nm CMOS Technology Seminar Series
30 Sep 2015 | | Contributor(s):: Mark Lundstrom
Today's CMOS technology is so-called 14-nm technology. 10 nm technology development is well underway, and 7 nm has begun. It will soon be time to select a technology for the 5 nm node. To help understand the device options, what each on promises, what the challenges and trade-offs are,...
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ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
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ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
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ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
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ECE 612 Lecture 23: RF CMOS
02 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Introduction,2) Small signal model,3) Transconductance,4) Self-gain,5) Gain bandwidth product,6) Unity power gain,7) Noise, mismatch, linearity…,8) Examples
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Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
14 Dec 2015 | | Contributor(s):: Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
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Essential Physics of the Ultimate MOSFET and the Next 20 Years of Semiconductor Technology
18 Mar 2024 | | Contributor(s):: Mark Lundstrom
My goal in this talk is to discuss the operation of these devices in a simple but physically sound way. A broader goal of my talk is to discuss how semiconductor technology will meet the insatiable appetite that artificial intelligence has for more computing, more memory, and faster communication.
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Green Light on Germanium
02 Nov 2015 | | Contributor(s):: peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...
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In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | | Contributor(s):: Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered is...
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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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Moore's Law and Radiation Effects on Microelectronics
03 Oct 2023 | | Contributor(s):: Daniel M. Fleetwood
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Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs
05 Oct 2015 | | Contributor(s):: Juses A. del Alamo
This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.