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Abdurrahman Javid Shaikh
Advanced CMOS Device Physics for 7 nm and Beyond
16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson
This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...
Carbon-Based Nanoswitch Logic
28 Mar 2013 | Online Presentations | Contributor(s): Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude...
Charles Augustine (S’08-M’11) received the Bachelors in Electronics from BITS, Pilani, India in 2004 and the PhD degree in Electrical and Computer Engineering from Purdue University...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
ECE 612 Lecture 18A: CMOS Process Steps
0.0 out of 5 stars
12 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations,
2) Process Variations.
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete...
ECE 612 Lecture 22: CMOS Circuit Essentials
4.0 out of 5 stars
24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,
4) Circuit performance,
This lecture is an overview of CMOS circuits. For a more detailed presentation, the...
ECE 612 Lecture 23: RF CMOS
02 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Introduction,
2) Small signal model,
5) Gain bandwidth product,
6) Unity power gain,
7) Noise, mismatch, linearity…,
Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | Online Presentations | Contributor(s): Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a...
Ivan C R nascimento
Mohamed Tarek Ghoneim
NanoV: Nanowire-based VLSI Design
08 Sep 2010 | Downloads | Contributor(s): muzaffer simsir
In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nanotechnologies, nanowires have the edge in the size of circuits and logic arrays that...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...