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nMOSFET RF and noise model on standard 45nm SOI technology
01 Jan 2017 | Compact Models | Contributor(s):
By Yanfei Shen1, Saeed Mohammadi1
A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
A Phase-Changing Oxide for PS Silicon Photonics
03 Nov 2016 | Online Presentations | Contributor(s): Richard Haglund
Richard Haglund is the Stevenson Professor of Physics at Vanderbilt University. He was a member of the scientific staff of the Los Alamos National Laboratory from 1976 to 1984, beginning as a...
Advanced CMOS Device Physics for 7 nm and Beyond
16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson
This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...
Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
Ivan C R nascimento
RF Solid-State Vibrating Transistors
15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Carbon-Based Nanoswitch Logic
28 Mar 2013 | Online Presentations | Contributor(s): Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude...
Mohamed Tarek Ghoneim
Uniform Methodology of Benchmarking Beyond-CMOS Devices
31 Oct 2012 | Online Presentations | Contributor(s): Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and...
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | Online Presentations | Contributor(s): Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...
Abdurrahman Javid Shaikh