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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
How to specify the type
Closed | Responses: 0
I do not know how to specify the FETtype when using the VSCNFET model?
Would you mind if I ask you to answer this issue
Help, Error with simulation
Open | Responses: 1
I tried to simulate an LNA using Virtual-Source Carbon Nanotube Field-Effect Transistor using HSPICE 2008,03 but it gave me this error " hsp-vacomp: Error:...
Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
08 Apr 2015 | Compact Models | Contributor(s):
By Chi-Shuen Lee1, H.-S. Philip Wong1
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...
Zubair Ebne Rafique
24 Sep 2013 |
Posted by Tanya Faltens
Here is an explanation from Emily on the mysterious creation of links, and how to avoid it with a leading bang.
This is actually a feature in the wiki called CamelCase. This is the...
The Road Ahead for Carbon Nanotube Transistors
09 Jul 2013 | | Contributor(s):: Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
The astonishing similarities between CNTFET-based nanowired transducers and nanowire FET-based nanoelectronic biomaterials
01 May 2013 |
Posted by Rostyslav Sklyar
There are two articles which analyzed comparatively:
1. using synonyms for the words/terms of the copied text and rephrasing of its pieces;
2. application of so-called “logical...
A CNTFET-Based Nanowired Induction Two-Way Transducers
05 Sep 2012 | | Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...
Dear sir, i need some simulation on CNTFET tool but it will not work properly and results are not seen
how to start modelling and simulation based work on CNTFET devices?
how many are there cntfet simulation methodes?
1-how many are there cntfet simulation methodes?
2-whats resourse for there?
3-i want to know about CNTFET with slice gate structre.