DATE CHANGE: nanoHUB could be intermittently unavailable on 05/06 from 8:00 am – 1:00 pm (EST) for scheduled maintenance. All tool sessions will expire on 05/06 at 8:00 am (EST).
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model
08 Apr 2015 | Compact Models | Contributor(s):
By Chi-Shuen Lee1, H.-S. Philip Wong1
The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the...