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  1. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    08 Apr 2015 | Compact Models | Contributor(s):

    By Chi-Shuen Lee1, H.-S. Philip Wong1

    Stanford University

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the..., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.