Tags: CNTFET

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  1. Dear sir, i need some simulation on CNTFET tool but it will not work properly and results are not seen

    Closed | Responses: 0

    http://nanohub.org/answers/question/1019

  2. Help, Error with simulation

    Open | Responses: 1

    Dears

    I tried to simulate an LNA using Virtual-Source Carbon Nanotube Field-Effect Transistor using HSPICE 2008,03 but it gave me this error " hsp-vacomp: Error:...

    http://nanohub.org/answers/question/1540

  3. how many are there cntfet simulation methodes?

    Closed | Responses: 0

    Dear Mr/Ms

    1-how many are there cntfet simulation methodes? 2-whats resourse for there? 3-i want to know about CNTFET with slice gate structre.

    http://nanohub.org/answers/question/631

  4. how to start modelling and simulation based work on CNTFET devices?

    Closed | Responses: 0

    http://nanohub.org/answers/question/863

  5. how we obtain the id-vd characterstics of planer cntfet

    Closed | Responses: 0

    how we obtain the id-vd characterstics of planer cntfet in cntlab by changing the parameters

    http://nanohub.org/answers/question/539

  6. The electrical field from the gate of CNFET can not affect the transistor.

    Open | Responses: 2

    Hi all,

    I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...

    http://nanohub.org/answers/question/60

  7. where is exactly this carbon nano tubes are used ???

    Closed | Responses: 0

    http://nanohub.org/answers/question/441

  8. which is advantageous either the cnt electromechanical memory or the cntfet memory?

    Closed | Responses: 0

    whats the advantage and disadvantages of 1.the cnt electromechanical memory 2.the cntmosfet memory what can be the possible solution for the current situation of nonvolatile ram?

    http://nanohub.org/answers/question/583

  9. A CNTFET-Based Nanowired Induction Two-Way Transducers

    05 Sep 2012 | | Contributor(s):: Rostyslav Sklyar

    A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...

  10. Al-Amin Sheikh

    http://nanohub.org/members/160887

  11. Ambar Shukla

    http://nanohub.org/members/128832

  12. Ashish Agrawal

    http://nanohub.org/members/28577

  13. CamelCase

    24 Sep 2013 | Posted by Tanya Faltens

    Here is an explanation from Emily on the mysterious creation of links, and how to avoid it with a leading bang. Hi Tanya, This is actually a feature in the wiki called CamelCase. This is the...

    http://nanohub.org/members/29294/blog/2013/09/camelcase

  14. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  15. CNT Mobility

    26 Apr 2009 | | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop

    Simulate field effect carrier mobility in back-gated CNTFET devices at low field

  16. CNTbands: First-Time User Guide

    14 Jun 2009 | | Contributor(s):: Xufeng Wang, Youngki Yoon

    This is a simple guide designed for first-time users of CNTbands. It gives a brief introduction of the tool and a series of tutorials to help users learn the basics of CNTbands.NCN@Purdue

  17. CNTFET Lab

    13 Mar 2006 | | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom

    Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

  18. Cory D. Cress

    http://nanohub.org/members/19085

  19. Cylindrical CNT MOSFET Simulator

    22 Jul 2008 | | Contributor(s):: Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom

    Simulate 2-D electrons transport in CNTFET

  20. Electron Transport in Schottky Barrier CNTFETs

    24 Oct 2017 | | Contributor(s):: Igor Bejenari

    A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...