Tags: Compact Model

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  1. Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    27 Mar 2019 | Compact Models | Contributor(s):

    By Weijie Xu1, Jinfeng Kang1

    Peking University

    The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the...

    http://nanohub.org/publications/284/?v=1

  2. Stanford 2D Semiconductor (S2DS) Transistor Model

    11 Aug 2018 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=3

  3. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    07 Mar 2018 | Compact Models | Contributor(s):

    By You WANG1, Yue ZHANG1, Weisheng Zhao1, Jacques-Olivier Klein2, Dafiné Ravelosona2, Hao Cai3, Lirida Naviner3

    1. Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing 100191, China 2. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France 3. Département Communications et Electronique, Télécom-ParisTech, Université Paris-Saclay 75013, France

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...

    http://nanohub.org/publications/56/?v=4

  4. SPICE Subcircuit Generator for Ferromagnetic Nanomaterials

    05 Feb 2018 | Contributor(s):: Onur Dincer, Azad Naeemi

    Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

  5. CNRS - Carbon Nanotube Interconnect RC Model

    06 Oct 2017 | Compact Models | Contributor(s):

    By Jie LIANG1, Aida Todri2

    1. CNRS (Centre National de la Recherche Scientifique) 2. CNRS

    This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are...

    http://nanohub.org/publications/200/?v=1

  6. I want to make a compact model for FinFET with Verilog-A to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?

    Closed | Responses: 0

    http://nanohub.org/answers/question/1942

  7. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    12 Jul 2017 | Compact Models | Contributor(s):

    By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2

    1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...

    http://nanohub.org/publications/56/?v=2

  8. Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    http://nanohub.org/publications/186/?v=1

  9. Purdue Solar Cell Model (PSM) - HIT

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    http://nanohub.org/publications/185/?v=1

  10. Purdue Solar Cell Model (PSM) - Si

    04 May 2017 | Compact Models | Contributor(s):

    By Mark Lundstrom1, Muhammad Ashraful Alam2, Raghu Vamsi Krishna Chavali1, Sourabh Dongaonkar1, Suhas Venkat Baddela1, Xingshu Sun1

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    http://nanohub.org/publications/184/?v=1

  11. Purdue Solar Cell Model (PSM) - CIGS/CdTe

    04 May 2017 | Compact Models | Contributor(s):

    By Xingshu Sun1, Sourabh Dongaonkar1, Raghu Vamsi Krishna Chavali1, Suhas Venkat Baddela1, Mark Lundstrom1, Muhammad Ashraful Alam2

    1. Purdue University 2. Lucent Technologies

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

    http://nanohub.org/publications/183/?v=1

  12. Thermoelectric Device Compact Model

    27 Mar 2017 | Compact Models | Contributor(s):

    By Xufeng Wang1, Kyle Conrad1, Jesse Maassen1, Mark Lundstrom1

    Purdue University

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

    http://nanohub.org/publications/80/?v=2

  13. sugarcube-cad

    18 Feb 2016 | | Contributor(s):: Jason Clark, Quincy Clark

    CAD for MEMS via systems of compact models. This commercial tool is published by Sugarcube Systems, which requires a registration fee to use. The nanoHUB does not receive revenue or assume liability for the use of this tool.

  14. Stanford 2D Semiconductor (S2DS) Transistor Model

    04 Apr 2016 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=2

  15. Double-Clamped Silicon NEMS Resonators Model

    22 Feb 2016 | Compact Models | Contributor(s):

    By Yanfei Shen1, Scott Calvert1, Jeffrey F. Rhoads1, Saeed Mohammadi1

    Purdue University

    This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation...

    http://nanohub.org/publications/125/?v=1

  16. MAPP: The Berkeley Model and Algorithm Prototyping Platform

    11 Jan 2016 | | Contributor(s):: Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform (MAPP). MAPP is a MATLAB-based platform that provides a complete environment for developing, testing,...

  17. MVS Nanotransistor Model (Silicon)

    02 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    http://nanohub.org/publications/15/?v=4

  18. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    http://nanohub.org/publications/71/?v=1

  19. MVS Nanotransistor Model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    http://nanohub.org/publications/74/?v=1

  20. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    06 Oct 2015 | Compact Models | Contributor(s):

    By Michael Schroter1, Max Haferlach2, Martin Claus2

    1. UCSD 2. Technische Universität Dresden

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

    http://nanohub.org/publications/62/?v=2