
Peking University ResistiveSwitching Random Access Memory (RRAM) VerilogA Model
27 Mar 2019  Compact Models  Contributor(s):
By Weijie Xu^{1}, Jinfeng Kang^{1}
Peking University
The Peking University RRAM Model is a SPICEcompatible compact model which is designed for simulation of metaloxide based RRAM devices. It captures typical DC and AC electrical behaviors of the...
http://nanohub.org/publications/284/?v=1

Stanford 2D Semiconductor (S2DS) Transistor Model
11 Aug 2018  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
http://nanohub.org/publications/18/?v=3

Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
07 Mar 2018  Compact Models  Contributor(s):
By You WANG^{1}, Yue ZHANG^{1}, Weisheng Zhao^{1}, JacquesOlivier Klein^{2}, Dafiné Ravelosona^{2}, Hao Cai^{3}, Lirida Naviner^{3}
1. Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing 100191, China 2. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of ParisSud 11, 91405 Orsay, France 3. Département Communications et Electronique, TélécomParisTech, Université ParisSaclay 75013, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
http://nanohub.org/publications/56/?v=4

SPICE Subcircuit Generator for Ferromagnetic Nanomaterials
05 Feb 2018  Contributor(s):: Onur Dincer, Azad Naeemi
Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

CNRS  Carbon Nanotube Interconnect RC Model
06 Oct 2017  Compact Models  Contributor(s):
By Jie LIANG^{1}, Aida Todri^{2}
1. CNRS (Centre National de la Recherche Scientifique) 2. CNRS
This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are...
http://nanohub.org/publications/200/?v=1

I want to make a compact model for FinFET with VerilogA to use it in HSpice, but I'm really new in this subject and don't know where to start. Can anyone help me with some documents in this subject?
Closed  Responses: 0
http://nanohub.org/answers/question/1942

Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
12 Jul 2017  Compact Models  Contributor(s):
By You WANG^{1}, Yue ZHANG^{2}, JacquesOlivier Klein^{3}, Thibaut Devolder^{3}, Dafiné Ravelosona^{3}, Claude Chappert^{3}, Weisheng Zhao^{2}
1. Institut MinesTéléecom, TélécomParisTech, LTCICNRSUMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of ParisSud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
http://nanohub.org/publications/56/?v=2

Purdue Solar Cell Model (PSM)  Perovskite/aSi (pin)
04 May 2017  Compact Models  Contributor(s):
By Xingshu Sun^{1}, Raghu Vamsi Krishna Chavali^{1}, Sourabh Dongaonkar^{1}, Suhas Venkat Baddela^{1}, Mark Lundstrom^{1}, Muhammad Ashraful Alam^{2}
1. Purdue University 2. Lucent Technologies
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of cSi, aSi, perovskites, CIGS, CdTe, and HIT. This...
http://nanohub.org/publications/186/?v=1

Purdue Solar Cell Model (PSM)  HIT
04 May 2017  Compact Models  Contributor(s):
By Xingshu Sun^{1}, Raghu Vamsi Krishna Chavali^{1}, Sourabh Dongaonkar^{1}, Suhas Venkat Baddela^{1}, Mark Lundstrom^{1}, Muhammad Ashraful Alam^{2}
1. Purdue University 2. Lucent Technologies
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of cSi, aSi, perovskites, CIGS, CdTe, and HIT. This...
http://nanohub.org/publications/185/?v=1

Purdue Solar Cell Model (PSM)  Si
04 May 2017  Compact Models  Contributor(s):
By Mark Lundstrom^{1}, Muhammad Ashraful Alam^{2}, Raghu Vamsi Krishna Chavali^{1}, Sourabh Dongaonkar^{1}, Suhas Venkat Baddela^{1}, Xingshu Sun^{1}
1. Purdue University 2. Lucent Technologies
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of cSi, aSi, perovskites, CIGS, CdTe, and HIT. This...
http://nanohub.org/publications/184/?v=1

Purdue Solar Cell Model (PSM)  CIGS/CdTe
04 May 2017  Compact Models  Contributor(s):
By Xingshu Sun^{1}, Sourabh Dongaonkar^{1}, Raghu Vamsi Krishna Chavali^{1}, Suhas Venkat Baddela^{1}, Mark Lundstrom^{1}, Muhammad Ashraful Alam^{2}
1. Purdue University 2. Lucent Technologies
Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of cSi, aSi, perovskites, CIGS, CdTe, and HIT. This...
http://nanohub.org/publications/183/?v=1

Thermoelectric Device Compact Model
27 Mar 2017  Compact Models  Contributor(s):
By Xufeng Wang^{1}, Kyle Conrad^{1}, Jesse Maassen^{1}, Mark Lundstrom^{1}
Purdue University
The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
http://nanohub.org/publications/80/?v=2

sugarcubecad
18 Feb 2016   Contributor(s):: Jason Clark, Quincy Clark
CAD for MEMS via systems of compact models. This commercial tool is published by Sugarcube Systems, which requires a registration fee to use. The nanoHUB does not receive revenue or assume liability for the use of this tool.

Stanford 2D Semiconductor (S2DS) Transistor Model
04 Apr 2016  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
http://nanohub.org/publications/18/?v=2

DoubleClamped Silicon NEMS Resonators Model
22 Feb 2016  Compact Models  Contributor(s):
By Yanfei Shen^{1}, Scott Calvert^{1}, Jeffrey F. Rhoads^{1}, Saeed Mohammadi^{1}
Purdue University
This model is built for a siliconbased, doubleclamped (source and drain), doublegate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation...
http://nanohub.org/publications/125/?v=1

MAPP: The Berkeley Model and Algorithm Prototyping Platform
11 Jan 2016   Contributor(s):: Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform (MAPP). MAPP is a MATLABbased platform that provides a complete environment for developing, testing,...

MVS Nanotransistor Model (Silicon)
02 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical parameters.
http://nanohub.org/publications/15/?v=4

MVS IIIV HEMT model
01 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical...
http://nanohub.org/publications/71/?v=1

MVS Nanotransistor Model
01 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical parameters.
http://nanohub.org/publications/74/?v=1

CCAM Compact Carbon Nanotube FieldEffect Transistor Model
06 Oct 2015  Compact Models  Contributor(s):
By Michael Schroter^{1}, Max Haferlach^{2}, Martin Claus^{2}
1. UCSD 2. Technische Universität Dresden
CCAM is a semiphysical carbon nanotube fieldeffect transistor model applicable for digital, analog and high frequency applications.
http://nanohub.org/publications/62/?v=2