Tags: computational electronics

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  1. Additional Tutorials on Selected Topics in Nanotechnology

    29 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja

    Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

  2. Tutorial 4: Far-From-Equilibrium Quantum Transport

    29 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.

  3. Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D

    29 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors

  4. NCN, nanoHUB, HUBzero: cyberinfrastructure for nanotechnology

    10 Feb 2011 | | Contributor(s):: Mark Lundstrom

    Presentation made at the Workshop to Develop the Global Nanotechnology Network, Grenoble, France.

  5. Quantum Dot Wave Function (Quantum Dot Lab)

    02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

  6. Self-Assembled Quantum Dot Structure (pyramid)

    02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

  7. Quantum Dot Wave Function (still image)

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

  8. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

  9. Electron Density in a Nanowire

    30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

    Electron Density in a circular Silicon nanowire transistor.

  10. Tunneling in an Nanometer-Scaled Transistor

    25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

    Electrons tunneling through the gate of an ultra-scaled transistor.

  11. 2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    18 Jan 2011 |

    Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

  12. Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk

    04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin, Chris Bowen

    This presentation discusses disorder in AlGaAs unstrained systems in bulk. Bandstructure of an ideal simple unit cellWhat happens when there is disorder?Concept of a supercellBand folding in a supercellBand extraction from the concept of approximate bandstructureComparison of alloy disorder with...

  13. Computer in Science Engineering: featuring nanoHUB.org

    22 Apr 2010 |

    The current issue of Computing in Science and Engineering focuses on cyber-enabled nanotechnology, and nanoHUB.org is featured extensively throughout.

  14. Research projects for summer

    Q&A|Closed | Responses: 0

    I am a sophomore in computer engineering and I wanted to know if there are any good research projects this summer in my field. If there are, could you please write the project and the professor...

    https://nanohub.org/answers/question/460

  15. Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights

    07 Feb 2010 | | Contributor(s):: Gerhard Klimeck

    The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turn-around, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...

  16. Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices

    25 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to...

  17. Nanoelectronic Modeling Lecture 03: nanoHUB.org - Online Simulation and More

    25 Jan 2010 | | Contributor(s):: Gerhard Klimeck

    This presentation provides a brief overview of the nanoHUB capabilites, compares it to static web page delivery, highlights its technology basis, and provides a vision for future cyberinfrastructures in a system of federated HUBs powered by the HUBzero.org infrastructure.

  18. Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background

    25 Jan 2010 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska

    Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...

  19. Lecture 5: NEGF Simulation of Graphene Nanodevices

    23 Sep 2009 | | Contributor(s):: Supriyo Datta

  20. From Semi-Classical to Quantum Transport Modeling: What is Computational Electronics?

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...