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Computer in Science Engineering: featuring nanoHUB.org
22 Apr 2010 | Papers
The current issue of Computing in Science and Engineering focuses on cyber-enabled nanotechnology, and nanoHUB.org is featured extensively throughout.
Electron Density in a Nanowire
30 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
From Semi-Classical to Quantum Transport Modeling: What is Computational Electronics?
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is...
Lecture 5: NEGF Simulation of Graphene Nanodevices
23 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta
Network for Computational Nanotechnology,
Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
25 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these...
Nanoelectronic Modeling Lecture 03: nanoHUB.org - Online Simulation and More
25 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a brief overview of the nanoHUB capabilites, compares it to static web page delivery, highlights its technology basis, and provides a vision for future...
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
07 Feb 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast...
Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses disorder in AlGaAs unstrained systems in bulk.
Bandstructure of an ideal simple unit cell
What happens when there is disorder?
Concept of a...
Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices
25 Jan 2010 | Courses | Contributor(s): Gerhard Klimeck
The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum...
NCN, nanoHUB, HUBzero: cyberinfrastructure for nanotechnology
10 Feb 2011 | Online Presentations | Contributor(s): Mark Lundstrom
Presentation made at the Workshop to Develop the Global Nanotechnology Network, Grenoble, France.
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Quantum Dot Wave Function (still image)
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.