
Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding
18 Aug 2008  Online Presentations  Contributor(s): Duane Douglas Johnson, Omar N Sobh
Refortify your chemistry  Atomic scale structures Goals Define basic concepts: Filling of Atomic Energy Levels: Pauli Exclusion Principle Atomic Orbitals (s, p, d, and f type …
http://nanohub.org/resources/5240

ECE 495N Lecture 3: Importance of Electrostatics
10 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5360

ECE 495N Lecture 4: Quantitative Model for Nanodevices I
10 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5361

Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics …
http://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
http://nanohub.org/resources/5310

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultrathin body), 5) Summary.
http://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals, 2) Identify next steps.
http://nanohub.org/resources/5341

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent …
http://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in …
http://nanohub.org/resources/5311

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the …
http://nanohub.org/resources/5312

Lecture 4A: Energy Exchange and Maxwell's Demon
02 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauerlike picture" where the Joule heating associated with …
http://nanohub.org/resources/5271

ECE 495N Lecture 2: Quantum of Conductance
02 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5355

ECE 495N Lecture 1: What Makes Current Flow?
28 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5345

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the …
http://nanohub.org/resources/5307

Introduction: Nanoelectronics and the meaning of resistance
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
This lecture provides a brief overview of the fiveday short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all …
http://nanohub.org/resources/5210

Lecture 1A: What and where is the resistance?
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which …
http://nanohub.org/resources/5211

Lecture 1B: What and where is the resistance?
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which …
http://nanohub.org/resources/5248

Lecture 2A: Quantum Transport
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To extend the simple model from Lectures 1 into the fullfledged Nonequilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers …
http://nanohub.org/resources/5263

Lecture 2B: Quantum Transport
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To extend the simple model from Lectures 1 into the fullfledged Nonequilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers …
http://nanohub.org/resources/5268