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ECE 495N Lecture 6: Quantitative Model for Nanodevices III
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12 Sep 2008 | | Contributor(s):: Supriyo Datta
Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding
18 Aug 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Refortify your chemistry - Atomic scale structuresGoals Define basic concepts: Filling of Atomic Energy Levels: Pauli Exclusion Principle Atomic Orbitals (s-, p-, d-, and f- type electrons) Types of Bonding between Atoms The Periodic Table (and solid state structures) Bond Energy Curves Describe...
ECE 495N Lecture 3: Importance of Electrostatics
10 Sep 2008 | | Contributor(s):: Supriyo Datta
ECE 495N Lecture 4: Quantitative Model for Nanodevices I
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
ECE 612 Lecture 2: 1D MOS Electrostatics II
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
ECE 612 Lecture 1: 1D MOS Electrostatics I
Outline: 1) Review of some fundamentals,2) Identify next steps.
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | | Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
Lecture 4A: Energy Exchange and Maxwell's Demon
02 Sep 2008 | | Contributor(s):: Supriyo Datta
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauer-like picture" where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
ECE 495N Lecture 2: Quantum of Conductance
ECE 495N Lecture 1: What Makes Current Flow?
28 Aug 2008 | | Contributor(s):: Supriyo Datta
Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
Introduction: Nanoelectronics and the meaning of resistance
20 Aug 2008 | | Contributor(s):: Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...
Lecture 1A: What and where is the resistance?
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
Lecture 1B: What and where is the resistance?
Lecture 2A: Quantum Transport
Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...