Tags: course lecture

Online Presentations (101-120 of 1108)

  1. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices

  2. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices

  3. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...

  4. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions

  5. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions

  6. ECE 595E Lecture 15: Beam Propagation Method II

    19 Feb 2013 | | Contributor(s):: Peter Bermel

  7. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions

  8. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...

  9. PHYS 620 Lecture 4: Interband Transitions and Optical Selection Rules

    19 Feb 2013 | | Contributor(s):: Roberto Merlin

  10. PHYS 620 Lecture 9: Fano Interference and Coupled Oscillators

    19 Feb 2013 | | Contributor(s):: Roberto Merlin

  11. ECE 595E Lecture 13: Programming with FFTW

    14 Feb 2013 | | Contributor(s):: Peter Bermel

  12. ECE 595E Lecture 14: Beam Propagation Method I

    14 Feb 2013 | | Contributor(s):: Peter Bermel

  13. PHYS 620 Lecture 3: Polarization: A Quantum Approach

    13 Feb 2013 | | Contributor(s):: Roberto Merlin

  14. ECE 695A Lecture 5R: Review Questions

    12 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the difference between coordination and composition?Is periodicity essential for a defect-free structure?Why can’t the amorphous material have arbitrary ring distribution?How does Temperature enter in Maxwell’s relationship?Do you expect more or less defect for...

  15. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...

  16. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

  17. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion

  18. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...

  19. ECE 595E Lecture 12: Applications of FFT

    08 Feb 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from FridayReal FFTsMultidimensional FFTsApplications:Correlation measurementsFilter diagonalization method

  20. ECE 595E Lecture 11: Fast Fourier Transforms

    08 Feb 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from WednesdayFourier AnalysisScalings and SymmetriesSampling TheoremDiscrete Fourier TransformsNaïve approachDanielson-Lanczos lemmaCooley-Tukey algorithmExamples