
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008   Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nanodevice to show the connection explicitly.

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 3: Crystallographic Points, Directions, and Planes
22 Sep 2008   Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Crystallographic Points, Directions, and PlanesIssues to Address...How to define points, directions, planes, as well aslinear, planar, and volume densitiesDefine basic terms and give examples of each: Points (atomic positions) Vectors (defines a particular direction  plane normal) Miller...

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 2: Structure of Ceramics
21 Sep 2008   Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Structure of CeramicsIssues to Address...Structures of ceramic materials: How do they differ from that of metals?Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure Unit Cell Coordination Numbers Describe hardsphere packing and identify...

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 1: Structure of Metals and Ceramics
19 Sep 2008   Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Structures of Metals and CeramicsGoals Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure Unit Cell Coordination Numbers Describe hardsphere packing and identify cell symmetry Crystals density: the mass per volume (e.g. g/cm3) Linear...

ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
17 Sep 2008   Contributor(s):: Supriyo Datta

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...

ECE 495N Lecture 5: Quantitative Model for Nanodevices II
12 Sep 2008   Contributor(s):: Supriyo Datta

ECE 495N Lecture 6: Quantitative Model for Nanodevices III
12 Sep 2008   Contributor(s):: Supriyo Datta

Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding
18 Aug 2008   Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Refortify your chemistry  Atomic scale structuresGoals Define basic concepts: Filling of Atomic Energy Levels: Pauli Exclusion Principle Atomic Orbitals (s, p, d, and f type electrons) Types of Bonding between Atoms The Periodic Table (and solid state structures) Bond Energy Curves Describe...

ECE 495N Lecture 3: Importance of Electrostatics
10 Sep 2008   Contributor(s):: Supriyo Datta

ECE 495N Lecture 4: Quantitative Model for Nanodevices I
10 Sep 2008   Contributor(s):: Supriyo Datta

Lecture 3A: The Ballistic MOSFET
10 Sep 2008   Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture  just a proper mathematical derivation of the approach that was developed...

Lecture 3B: The Ballistic MOSFET
10 Sep 2008   Contributor(s):: Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultrathin body), 5) Summary.

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Review of some fundamentals,2) Identify next steps.

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008   Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

Lecture 4A: Energy Exchange and Maxwell's Demon
02 Sep 2008   Contributor(s):: Supriyo Datta
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauerlike picture" where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...