
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
http://nanohub.org/resources/5314

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 3: Crystallographic Points, Directions, and Planes
23 Sep 2008  Online Presentations  Contributor(s): Duane Douglas Johnson, Omar N Sobh
Crystallographic Points, Directions, and Planes
Issues to Address...
How to define points, directions, planes, as well as
linear, planar, and volume densities
Define basic terms and give...
http://nanohub.org/resources/5469

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 2: Structure of Ceramics
23 Sep 2008  Online Presentations  Contributor(s): Duane Douglas Johnson, Omar N Sobh
Structure of Ceramics
Issues to Address...
Structures of ceramic materials:
How do they differ from that of metals?
Define basic terms and give examples of each:
Lattice ...
http://nanohub.org/resources/5467

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 1: Structure of Metals and Ceramics
19 Sep 2008  Online Presentations  Contributor(s): Duane Douglas Johnson, Omar N Sobh
Structures of Metals and Ceramics
Goals
Define basic terms and give examples of each:
Lattice
Basis Atoms (Decorations or Motifs)
Crystal Structure ...
http://nanohub.org/resources/5460

ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
17 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5423

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
http://nanohub.org/resources/5313

ECE 495N Lecture 5: Quantitative Model for Nanodevices II
12 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5411

ECE 495N Lecture 6: Quantitative Model for Nanodevices III
12 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5412

Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding
10 Sep 2008  Online Presentations  Contributor(s): Duane Douglas Johnson, Omar N Sobh
Refortify your chemistry  Atomic scale structures
Goals
Define basic concepts:
Filling of Atomic Energy Levels: Pauli Exclusion Principle
Atomic Orbitals (s, p, d, and f type...
http://nanohub.org/resources/5240

ECE 495N Lecture 3: Importance of Electrostatics
10 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5360

ECE 495N Lecture 4: Quantitative Model for Nanodevices I
10 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/5361

Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
http://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
http://nanohub.org/resources/5310

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.
http://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,
2) Identify next steps.
http://nanohub.org/resources/5341

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
http://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
http://nanohub.org/resources/5311

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
http://nanohub.org/resources/5312

Lecture 4A: Energy Exchange and Maxwell's Demon
02 Sep 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauerlike picture" where the Joule heating associated...
http://nanohub.org/resources/5271