Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 3: Crystallographic Points, Directions, and Planes

22 Sep 2008 | Online Presentations | Contributor(s): Duane Douglas Johnson, Omar N Sobh

Crystallographic Points, Directions, and Planes Issues to Address... How to define points, directions, planes, as well as linear, planar, and volume densities Define basic terms and give …

http://nanohub.org/resources/5469

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 2: Structure of Ceramics

21 Sep 2008 | Online Presentations | Contributor(s): Duane Douglas Johnson, Omar N Sobh

Structure of Ceramics Issues to Address... Structures of ceramic materials: How do they differ from that of metals? Define basic terms and give examples of each: Lattice …

http://nanohub.org/resources/5467

Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 1: Structure of Metals and Ceramics

19 Sep 2008 | Online Presentations | Contributor(s): Duane Douglas Johnson, Omar N Sobh

Structures of Metals and Ceramics Goals Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure …

http://nanohub.org/resources/5460

ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation

17 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

http://nanohub.org/resources/5423

Lecture 6: Quantum Transport in Nanoscale FETs

12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture …

http://nanohub.org/resources/5313

ECE 495N Lecture 5: Quantitative Model for Nanodevices II

12 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

http://nanohub.org/resources/5411

ECE 495N Lecture 6: Quantitative Model for Nanodevices III

12 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

http://nanohub.org/resources/5412

Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding

18 Aug 2008 | Online Presentations | Contributor(s): Duane Douglas Johnson, Omar N Sobh

Refortify your chemistry - Atomic scale structures Goals Define basic concepts: Filling of Atomic Energy Levels: Pauli Exclusion Principle Atomic Orbitals (s-, p-, d-, and f- type …

http://nanohub.org/resources/5240

ECE 495N Lecture 3: Importance of Electrostatics

10 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

http://nanohub.org/resources/5360

ECE 495N Lecture 4: Quantitative Model for Nanodevices I

10 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

http://nanohub.org/resources/5361

Lecture 3A: The Ballistic MOSFET

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics …

http://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

http://nanohub.org/resources/5310

ECE 612 Lecture 3: MOS Capacitors

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

http://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

http://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I

09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review of some fundamentals, 2) Identify next steps.

http://nanohub.org/resources/5341

Lecture 2: Elementary Theory of the Nanoscale MOSFET

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent …

http://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in …

http://nanohub.org/resources/5311

Lecture 5: Application to State-of-the-Art FETs

08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the …

http://nanohub.org/resources/5312

Lecture 4A: Energy Exchange and Maxwell's Demon

02 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauer-like picture" where the Joule heating associated with …

http://nanohub.org/resources/5271

ECE 495N Lecture 2: Quantum of Conductance

02 Sep 2008 | Online Presentations | Contributor(s): Supriyo Datta

http://nanohub.org/resources/5355