Tags: course lecture

Resources (881-900 of 1140)

  1. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | | Contributor(s):: Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.

  2. Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 3: Crystallographic Points, Directions, and Planes

    22 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh

    Crystallographic Points, Directions, and PlanesIssues to Address...How to define points, directions, planes, as well aslinear, planar, and volume densitiesDefine basic terms and give examples of each: Points (atomic positions) Vectors (defines a particular direction - plane normal) Miller...

  3. Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 2: Structure of Ceramics

    21 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh

    Structure of CeramicsIssues to Address...Structures of ceramic materials: How do they differ from that of metals?Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure Unit Cell Coordination Numbers Describe hard-sphere packing and identify...

  4. Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 1: Structure of Metals and Ceramics

    19 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh

    Structures of Metals and CeramicsGoals Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure Unit Cell Coordination Numbers Describe hard-sphere packing and identify cell symmetry Crystals density: the mass per volume (e.g. g/cm3) Linear...

  5. ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation

    17 Sep 2008 | | Contributor(s):: Supriyo Datta

  6. Lecture 6: Quantum Transport in Nanoscale FETs

    12 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...

  7. ECE 495N Lecture 5: Quantitative Model for Nanodevices II

    12 Sep 2008 | | Contributor(s):: Supriyo Datta

  8. ECE 495N Lecture 6: Quantitative Model for Nanodevices III

    12 Sep 2008 | | Contributor(s):: Supriyo Datta

  9. Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding

    18 Aug 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh

    Refortify your chemistry - Atomic scale structuresGoals Define basic concepts: Filling of Atomic Energy Levels: Pauli Exclusion Principle Atomic Orbitals (s-, p-, d-, and f- type electrons) Types of Bonding between Atoms The Periodic Table (and solid state structures) Bond Energy Curves Describe...

  10. ECE 495N Lecture 3: Importance of Electrostatics

    10 Sep 2008 | | Contributor(s):: Supriyo Datta

  11. ECE 495N Lecture 4: Quantitative Model for Nanodevices I

    10 Sep 2008 | | Contributor(s):: Supriyo Datta

  12. Lecture 3A: The Ballistic MOSFET

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...

  13. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

  14. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  15. ECE 612 Lecture 2: 1D MOS Electrostatics II

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

  16. ECE 612 Lecture 1: 1D MOS Electrostatics I

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review of some fundamentals,2) Identify next steps.

  17. Lecture 2: Elementary Theory of the Nanoscale MOSFET

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

  18. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...

  19. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

  20. Lecture 4A: Energy Exchange and Maxwell's Demon

    02 Sep 2008 | | Contributor(s):: Supriyo Datta

    Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauer-like picture" where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...