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ECE 495N Lecture 2: Quantum of Conductance
out of 5 stars
02 Sep 2008 | | Contributor(s):: Supriyo Datta
ECE 495N Lecture 1: What Makes Current Flow?
28 Aug 2008 | | Contributor(s):: Supriyo Datta
Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
Introduction: Nanoelectronics and the meaning of resistance
20 Aug 2008 | | Contributor(s):: Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...
Lecture 1A: What and where is the resistance?
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
Lecture 1B: What and where is the resistance?
Lecture 2A: Quantum Transport
Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...
Lecture 2B: Quantum Transport
Lecture 3A: Spin Transport
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...
Lecture 3B: Spin Transport
Lecture 4B: Energy Exchange and Maxwell’s Demon
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a “Landauer-like picture” where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
Lecture 5A: Correlations and Entanglement
Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...
Lecture 5B: Correlations and Entanglement
Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift
19 Aug 2008 | | Contributor(s):: Eric Pop
Discussion of scaleReview of atomic structureIntroduction to energy band model
Illinois ECE 440 Solid State Electronic Devices, Lecture 4: Energy Bands, Carrier Statistics, Drift
Energy Bands and CarriersBand gaps (lattice and temperature dependence)Band curvatureCarrier effective mass
Illinois ECE 440 Solid State Electronic Devices, Lecture 2: Crystal Lattices
14 Aug 2008 | | Contributor(s):: Eric Pop
Crystal Lattices:Periodic arrangement of atomsRepeated unit cells (solid-state)Stuffing atoms into unit cellsDiamond (Si) and zinc blende (GaAs)crystal structuresCrystal planesCalculating densities
Illinois MatSE 280 Introduction to Engineering Materials, Lecture 1: Materials: Their Properties and Failures
14 Aug 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
"Because without materials, there is no engineering"In this lecture we will discuss the following:- Units of Length- Six Major Classes of Materials- Periodic Table of Elements- Properties of Materials- Materials Science and Engineering in a Nutshell
MSE 640 Lecture 15: Theory of high resolutiion TEM, Part 1
29 May 2008 | | Contributor(s):: Eric Stach
MSE 640 Lecture 14: Overview of Phase Contrast & High resolution TEM
MSE 640 Lecture 13: Diffraction contrast imaging
Weak beam dark field imaging, Simulation of diffraction contrast