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ECE 495N Lecture 8: Shrödinger's Equation
30 Sep 2008 | | Contributor(s):: Supriyo Datta
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Introductory Comments
29 Sep 2008 | | Contributor(s):: Muhammad A. Alam
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Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 4: Structures via Diffusion
28 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Structures via DiffractionGoals Define basic ideas of diffraction (using x-ray, electrons, or neutrons, which, although they are particles, they can behave as waves) and show how to determine: Crystal Structure Miller Index Planes and Determine the Structure Identify cell symmetry Learning...
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Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
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Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 3: Crystallographic Points, Directions, and Planes
22 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Crystallographic Points, Directions, and PlanesIssues to Address...How to define points, directions, planes, as well aslinear, planar, and volume densitiesDefine basic terms and give examples of each: Points (atomic positions) Vectors (defines a particular direction - plane normal) Miller Indices...
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Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 2: Structure of Ceramics
21 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Structure of CeramicsIssues to Address...Structures of ceramic materials: How do they differ from that of metals?Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure Unit Cell Coordination Numbers Describe hard-sphere packing and identify...
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Illinois MATSE 280 Introduction to Engineering Materials, Lecture 3 Part 1: Structure of Metals and Ceramics
19 Sep 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Structures of Metals and CeramicsGoals Define basic terms and give examples of each: Lattice Basis Atoms (Decorations or Motifs) Crystal Structure Unit Cell Coordination Numbers Describe hard-sphere packing and identify cell symmetry Crystals density: the mass per volume (e.g. g/cm3) Linear...
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ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation
17 Sep 2008 | | Contributor(s):: Supriyo Datta
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Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008 | | Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
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ECE 495N Lecture 5: Quantitative Model for Nanodevices II
12 Sep 2008 | | Contributor(s):: Supriyo Datta
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ECE 495N Lecture 6: Quantitative Model for Nanodevices III
12 Sep 2008 | | Contributor(s):: Supriyo Datta
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Illinois MatSE 280 Introduction to Engineering Materials, Lecture 2: Atomic Structure and Interatomic Bonding
18 Aug 2008 | | Contributor(s):: Duane Douglas Johnson, Omar N Sobh
Refortify your chemistry - Atomic scale structuresGoals Define basic concepts: Filling of Atomic Energy Levels: Pauli Exclusion Principle Atomic Orbitals (s-, p-, d-, and f- type electrons) Types of Bonding between Atoms The Periodic Table (and solid state structures)...
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ECE 495N Lecture 3: Importance of Electrostatics
10 Sep 2008 | | Contributor(s):: Supriyo Datta
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ECE 495N Lecture 4: Quantitative Model for Nanodevices I
10 Sep 2008 | | Contributor(s):: Supriyo Datta
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Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
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Lecture 3B: The Ballistic MOSFET
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
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ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
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ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
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ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review of some fundamentals,2) Identify next steps.
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Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | | Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.