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ECE 695A Lecture 17R: Review Questions
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01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions: What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation? Why do people like to use C-V techniques? What method would you use for HCI …
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Keithley 4200-SCS Lecture 12: Ultra-fast I-V for Pulsed and Transient Characterization
24 Jan 2011 | Online Presentations | Contributor(s): Lee Stauffer
Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement
20 Jan 2011 | Online Presentations | Contributor(s): Lee Stauffer
Introduction to Device Characterization - System Overview: System Architecture, Hardware Features and Software Features - Precision DC I-V Source-Measure Features and Concepts.
Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)
Keithley 4200-SCS Lecture 03: More KITE Setup and Features
Keithley 4200-SCS Lecture 04: Speed and Timing Considerations
Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements
Keithley 4200-SCS Lecture 06: Troubleshooting
Keithley 4200-SCS Lecture 07: KCON Utility Overview
Keithley 4200-SCS Lecture 08: 4210 CVU Instrument Module - Overview
Theory of Operation and Measurement Overview
Keithley 4200-SCS Lecture 09: 4210 CVU Instrument Module - Measurement Techniques I
Measurement Techniques and Optimization
Keithley 4200-SCS Lecture 10: 4210 CVU Instrument Module - Measurement Techniques II
Keithley 4200-SCS: KITE Demo
Keithley 4200-SCS Lecture 11: 4210 CVU Instrument Module - Troubleshooting
Device Characterization with the Keithley 4200-SCS
20 Jan 2011 | Courses | Contributor(s): Lee Stauffer
This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument, as …
CV profile with different oxide thickness
20 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to …
Illinois ECE 440: MOS Capacitor Homework
28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
schred running ok?
Closed | Responses: 0
The CV for very thin oxide (considering only G vs considering GLX) on GaAs seems to be exactly similar. Which is surprising. can anyone check wheather schred is running properly or not?
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
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