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The CV for very thin oxide (considering only G vs considering GLX) on GaAs seems to be exactly similar. Which...
CV profile with different oxide thickness
20 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.C-V measurements...
Device Characterization with the Keithley 4200-SCS
20 Jan 2011 | | Contributor(s):: Lee Stauffer
This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument, as well as general measurement considerations.
ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 34: MOSCAP Frequency Response
out of 5 stars
16 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 695A Lecture 17R: Review Questions
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
Exercise: CV curves for MOS capacitors
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
Illinois ECE 440: MOS Capacitor Homework
27 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement
12 Jan 2011 | | Contributor(s):: Lee Stauffer
Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.
Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)
Keithley 4200-SCS Lecture 03: More KITE Setup and Features
Keithley 4200-SCS Lecture 04: Speed and Timing Considerations
Keithley 4200-SCS Lecture 05: Low Current and High Resistance Measurements
Keithley 4200-SCS Lecture 06: Troubleshooting
Keithley 4200-SCS Lecture 07: KCON Utility Overview
18 Jan 2011 | | Contributor(s):: Lee Stauffer
Keithley 4200-SCS Lecture 08: 4210 CVU Instrument Module - Overview
Theory of Operation and Measurement Overview
Keithley 4200-SCS Lecture 09: 4210 CVU Instrument Module - Measurement Techniques I
Measurement Techniques and Optimization
Keithley 4200-SCS Lecture 10: 4210 CVU Instrument Module - Measurement Techniques II
Keithley 4200-SCS Lecture 11: 4210 CVU Instrument Module - Troubleshooting
19 Jan 2011 | | Contributor(s):: Lee Stauffer