
Carrier Concentration
13 Jun 2012   Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

Computational Electronics HW  DOS and Fermi Golden Rule
11 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF

DFT Material Properties Simulator
21 Jul 2015   Contributor(s):: Gustavo Javier, Usama Kamran, David M Guzman, Alejandro Strachan, Peilin Liao
Compute electronic and mechanical properties of materials from DFT calculations with 1Click

Discussion Session 1 (Lectures 1a, 1b and 2)
08 Sep 2010   Contributor(s):: Supriyo Datta

ECE 495N Lecture 22: Density of States I
05 Nov 2008   Contributor(s):: Supriyo Datta

ECE 495N Lecture 23: Density of States II
05 Nov 2008   Contributor(s):: Supriyo Datta

ECE 495N Lecture 24: Subbands
05 Nov 2008   Contributor(s):: Supriyo Datta

ECE 495N Lecture 25: Density of Modes
05 Nov 2008   Contributor(s):: Supriyo Datta

ECE 606 Lecture 5: Density of States
28 Sep 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 8: Density of States
04 Feb 2009   Contributor(s):: Muhammad A. Alam
Outline:Calculation of density of statesDensity of states for specific materialsCharacterization of Effective MassConclusions

ECE 656 Lecture 3: Density of States
07 Sep 2011   Contributor(s):: Mark Lundstrom
Outline:Density of statesExample: grapheneDiscussionSummary

ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012   Contributor(s):: Mark Lundstrom

ECE 656 Lecture 4: Density of States  Density of Modes
14 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Density of states Example: graphene Density of modes Example: graphene Summary

ECE 659 Lecture 42: Summing Up
04 May 2009   Contributor(s):: Supriyo Datta

Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States
04 Dec 2008   Contributor(s):: Eric Pop, Umair Irfan

Lecture 10: Case studyNearequilibrium Transport in Graphene
19 Aug 2011   Contributor(s):: Mark Lundstrom
Nearequilibrium transport in graphene as an example of how to apply the concepts in lectures 18.

Lecture 1A: What and where is the resistance?
20 Aug 2008   Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...

Lecture 1B: What and where is the resistance?
20 Aug 2008   Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...

Lecture 2: Quantum of Conductance: Resistance and uncertainty
08 Sep 2010 

Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008   Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nanodevice to show the connection explicitly.