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13 Jun 2012 | | Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
Computational Electronics HW - DOS and Fermi Golden Rule
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11 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
DFT Material Properties Simulator
21 Jul 2015 | | Contributor(s):: Gustavo Javier, Usama Kamran, David M Guzman, Alejandro Strachan, Peilin Liao
Compute electronic and mechanical properties of materials from DFT calculations with 1-Click
Discussion Session 1 (Lectures 1a, 1b and 2)
08 Sep 2010 | | Contributor(s):: Supriyo Datta
ECE 495N Lecture 22: Density of States I
05 Nov 2008 | | Contributor(s):: Supriyo Datta
ECE 495N Lecture 23: Density of States II
ECE 495N Lecture 24: Subbands
ECE 495N Lecture 25: Density of Modes
ECE 606 Lecture 5: Density of States
28 Sep 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 8: Density of States
04 Feb 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Calculation of density of statesDensity of states for specific materialsCharacterization of Effective MassConclusions
ECE 656 Lecture 3: Density of States
07 Sep 2011 | | Contributor(s):: Mark Lundstrom
Outline:Density of statesExample: grapheneDiscussionSummary
ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 4: Density of States - Density of Modes
14 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Density of states Example: graphene Density of modes Example: graphene Summary
ECE 659 Lecture 42: Summing Up
04 May 2009 | | Contributor(s):: Supriyo Datta
Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States
04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan
Lecture 10: Case study-Near-equilibrium Transport in Graphene
19 Aug 2011 | | Contributor(s):: Mark Lundstrom
Near-equilibrium transport in graphene as an example of how to apply the concepts in lectures 1-8.
Lecture 1A: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
Lecture 1B: What and where is the resistance?
Lecture 2: Quantum of Conductance: Resistance and uncertainty
08 Sep 2010 |
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.