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  1. ECE 606 L16.3: Applications of SRH Formula for Special Cases

    20 Jul 2023 |

  2. ECE 606 L16.7: Surface Recombination in Depletion Region

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  3. ECE 606 L19.1: PN Junction - Structure and Depletion Region

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 L19.2: PN Junction - Drawing Band-Diagrams in Equilibrium

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  6. ECE 606 L23.1: Schottky Diode - Basics

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  7. ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  8. ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  9. ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  10. ECE 606 L30.1: MOSFET Introduction - Sub-Threshold (Depletion) Current

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  11. ECE 606 L30.2: MOSFET Introduction - Above-Threshold, Inversion Current

    20 Jul 2023 | | Contributor(s):: Gerhard Klimeck

  12. Illinois Tools: NP Junction: Long-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Tool Description

  13. Illinois Tools: NP Junction: Short-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Tool Description

  14. Illinois Tools: PN Junction Long-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Depletion Approximation for a PN Junction

  15. Illinois Tools: PN Junction Short-Base Depletion Approximation

    26 Jul 2008 | | Contributor(s):: Nahil Sobh, Mohamed Mohamed

    Tool Description

  16. Introduction to Solid State Electronic Devices Classes Tools

    26 Jul 2008 | | Contributor(s):: Mohamed Mohamed, Nahil Sobh, Kyeong-hyun Park

    Tools to complement Illinois Solid State Electronic Devices Classes

  17. n-type and p-type biasing regions for MOS capacitors

    01 Nov 2018 | | Contributor(s):: Lawrence Norman LeBlanc

    This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n- and p-type structures and provides a simple mnemonic for the order of the biasing regions on a...